5秒后页面跳转
2N2905LEADFREE PDF预览

2N2905LEADFREE

更新时间: 2024-11-18 20:04:11
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
2页 502K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N2905LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.08
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):180 ns最大开启时间(吨):45 ns
Base Number Matches:1

2N2905LEADFREE 数据手册

 浏览型号2N2905LEADFREE的Datasheet PDF文件第2页 
2N2904 2N2904A  
2N2905 2N2905A  
www.centralsemi.com  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N2904, 2N2905  
series types are PNP silicon transistors manufactured  
by the epitaxial planar process, designed for small  
signal, general purpose and switching applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
2N2904  
2N2905  
60  
2N2904A  
2N2905A  
60  
A
SYMBOL  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
CBO  
CEO  
EBO  
V
V
40  
60  
V
V
5.0  
0.6  
0.6  
3.0  
I
A
C
P
W
W
°C  
D
D
Power Dissipation (T =25°C)  
P
C
Operating and Storage Junction Temperature  
T , T  
-65 to +200  
J
stg  
2N2904  
2N2905  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=50V  
-
20  
-
10  
nA  
CBO  
CEV  
CB  
CE  
I
V
=30V, VEB=0.5V  
-
-
-
-
50  
-
nA  
V
BV  
BV  
BV  
I =10μA  
60  
40  
5.0  
-
60  
60  
5.0  
-
CBO  
C
I =10mA  
-
-
V
CEO  
C
I =10μA  
-
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
0.4  
1.6  
1.3  
2.6  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
-
V
C
B
I =150mA, I =15mA  
-
-
V
C
B
I =500mA, I =50mA  
-
-
V
C
B
2N2904  
2N2904A  
2N2905  
2N2905A  
MIN MAX  
MIN  
20  
=10V, I =100μA (2N2904A, 2N2905A) 40  
MAX  
-
h
h
h
h
h
h
h
h
h
V
=10V, I =100μA (2N2904, 2N2905)  
35  
-
FE  
FE  
FE  
FE  
FE  
FE  
FE  
FE  
FE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
V
V
V
-
75  
-
C
=10V, I =1.0mA (2N2904, 2N2905)  
25  
-
50  
-
C
=10V, I =1.0mA (2N2904A, 2N2905A) 40  
-
100  
75  
-
C
=10V, I =10mA (2N2904, 2N2905)  
35  
-
-
C
=10V, I =10mA (2N2904A, 2N2905A) 40  
-
100  
100  
30  
-
C
=10V, I =150mA  
40  
20  
120  
300  
C
=10V, I =500mA (2N2904, 2N2905)  
-
-
-
-
C
=10V, I =500mA (2N2904A, 2N2905A) 40  
50  
C
R1 (11-June 2012)  

2N2905LEADFREE 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N2905 MICROSEMI

功能相似

PNP SWITCHING SILICON TRANSISTOR
JANTXV2N2905 MICROSEMI

功能相似

PNP SWITCHING SILICON TRANSISTOR

与2N2905LEADFREE相关器件

型号 品牌 获取价格 描述 数据表
2N2906 CENTRAL

获取价格

PNP SILICON TRANSISTOR
2N2906 NJSEMI

获取价格

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
2N2906 NXP

获取价格

PNP switching transistors
2N2906 STMICROELECTRONICS

获取价格

1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS
2N2906 INFINEON

获取价格

PNP SILICON PLANAR TRANSISTORS
2N2906 MICRO-ELECTRONICS

获取价格

PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES
2N2906 SEMICOA

获取价格

Chip Type 2C2904A Geometry 0600 Polarity PNP
2N2906 RAYTHEON

获取价格

Medium Current General Purpose Amplifiers and Switches
2N2906 COMSET

获取价格

GENERAL PURPOSE AMPLIFIERS TRANSISTORS
2N2906 SEME-LAB

获取价格

SILICON PLANAR EPITAXIAL PNP TRANSISTOR