Datasheet > 2N2906

2N2906

更新时间： 2024-11-18 03:56:03

品牌	Logo	应用领域
雷神 - RAYTHEON		晶体开关放大器晶体管
页数	文件大小	规格书
2页	198K
描述
Medium Current General Purpose Amplifiers and Switches

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2N2906 数据手册

2N2904

Silicon PNP Transistor

Data Sheet

Description

Applications

• General purpose

• Low power

Semicoa Semiconductors offers:

• PNP silicon transistor

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N2904J)

• JANTX level (2N2904JX)

• JANTXV level (2N2904JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Features

• Hermetically sealed TO-39 metal can

• Also available in chip configuration

• Chip geometry 0600

• Reference document:

MIL-PRF-19500/290

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

T_C= 25°C unless otherwise specified

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

V_CEO

V_CBO

Rating

Unit

Volts

V_EBO

I_C

Collector Current, Continuous

600

Power Dissipation, T_A= 25 °C

Derate above 60 °C

0.8

P_T

5.7

mW/°C

Power Dissipation, T_C= 25 °C

3.0

17.2

mW/°C

°C/W

Derate above 25 °C

Thermal Resistance

175

R_θJA

T_J

°C

Operating Junction Temperature

Storage Temperature

-65 to +200

T_STG

Semicoa Semiconductors, Inc.

Rev. H

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 1

www.SEMICOA.com

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