5秒后页面跳转
JANS2N2905 PDF预览

JANS2N2905

更新时间: 2024-09-12 22:55:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管
页数 文件大小 规格书
2页 60K
描述
PNP SWITCHING SILICON TRANSISTOR

JANS2N2905 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.21
外壳连接:COLLECTOR最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-205AD
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W认证状态:Qualified
参考标准:MIL-19500/290子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):45 ns
Base Number Matches:1

JANS2N2905 数据手册

 浏览型号JANS2N2905的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 290  
Devices  
Qualified Level  
JAN  
2N2904  
2N2904A  
2N2904AL  
2N2905  
2N2905A  
2N2905AL  
JANTX  
JANTXV  
JANS  
MAXIMUM RATINGS  
2N2904 2N2904A, L  
Symbol 2N2905 2N2905A, L Unit  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
60  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
60  
5.0  
600  
Vdc  
TO-39* (TO-205AD)  
2N2904, 2N2904A  
2N2905, 2N2905A  
Vdc  
mAdc  
Total Power Dissipation @ TA = +250C (1)  
0.6  
3.0  
W
W
0C  
PT  
@ TC = +250C (2)  
Operating & Storage Junction Temp. Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/mW  
Thermal Resistance, Junction-to-Case  
0.29  
R
qJC  
TO-5*  
2N2904AL, 2N2905AL  
1) Derate linearly 3.43 W/0C for TA > +250C  
2) Derate linearly 17.2 W/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
2N2904, 2N2905  
V(BR)  
40  
60  
CEO  
2N2904A, L, 2N2905A, L  
Collector-Emitter Cutoff Voltage  
VCE = 40 Vdc  
VCE = 60 Vdc  
ICES  
2N2904, 2N2905  
2N2904A, L, 2N2905A, L  
mAdc  
1.0  
1.0  
Collector-Base Cutoff Current  
VCB = 50 Vdc  
2N2904, 2N2905  
2N2904A, L, 2N2905A, L  
All Types  
20  
10  
10  
hAdc  
mAdc  
ICBO  
VCB = 60 Vdc  
Emitter-Base Cutoff Current  
VEB = 3.5 Vdc  
VEB = 5.0 Vdc  
hAdc  
mAdc  
IEBO  
50  
10  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANS2N2905 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N3251A MICROSEMI

功能相似

Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
2N2905LEADFREE CENTRAL

功能相似

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,

与JANS2N2905相关器件

型号 品牌 获取价格 描述 数据表
JANS2N2905A MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANS2N2905A/TR MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JANS2N2905AL MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANS2N2905AL/TR MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JANS2N2906A MICROSEMI

获取价格

PNP SMALL SIGNAL SILICON TRANSISTOR
JANS2N2906AL MICROSEMI

获取价格

PNP SMALL SIGNAL SILICON TRANSISTOR
JANS2N2906AUA MICROSEMI

获取价格

PNP SMALL SIGNAL SILICON TRANSISTOR
JANS2N2906AUB MICROSEMI

获取价格

PNP SMALL SIGNAL SILICON TRANSISTOR
JANS2N2906AUBC MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC
JANS2N2907A MICROSEMI

获取价格

PNP SMALL SIGNAL SILICON TRANSISTOR