Datasheet > JANS2N3019S

JANS2N3019S

更新时间： 2024-11-28 22:55:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	65K
描述
LOW POWER NPN SILICON TRANSISTOR

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中文翻译

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数据手册
替代型号

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JANS2N3019S 数据手册

TECHNICAL DATA

LOW POWER NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 391

Devices

2N3019

Qualified Level

JAN

2N3057A

2N3700

2N3019S

2N3700S

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

Units

Vdc

V_CEO

V_CBO

V_EBO

I_C

140

7.0

Vdc

TO-39* (TO-205AD)

2N3019, 2N3019S

Vdc

1.0

Adc

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

2N3019; 2N3019S

2N3057A

2N3700

0.8

0.4

0.5

0.4

TO- 18* (TO-206AA)

2N3700

2N3700UB

P_T

@ T_C= +25⁰C⁽²⁾

2N3019; 2N3019S

2N3057A

5.0

1.8

2N3700

2N3700UB

Operating & Storage Jct Temp Range

1.8

1.16

-55 to +175

TO-46* (TO-206AB)

2N3057A

⁰C

T_J_,T

stg

1) Derate linearly 4.6 mW/⁰C for type 2N3019 and 2N3019S; 2.3 mW/⁰C for type 2N3057A;

2.85 mW/⁰C for type 2N3700; 6.6 mW/⁰C for type 2N3700UB for T_A³ +25⁰C.

2) Derate linearly 28.6 mW/⁰C for type 2N3019 and 2N3019S;

3 PIN SURFACE MOUNT*

2N3700UB

10.3 mW/⁰C for types 2N3057A, 2N3700, & 2N3700UB for T_C³ +25⁰C.

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

I_C= 100 mAdc

Emitter-Base Breakdown Voltage

I_E= 100 mAdc

Collector-Emitter Breakdown Current

I_C= 30 mAdc

140

7.0

Vdc

V_(BR)

CBO

V_(BR)

EBO

V_(BR)

CEO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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JANS2N3019S 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N3019S	MICROSEMI	完全替代	LOW POWER NPN SILICON TRANSISTOR
JANTX2N3019S	MICROSEMI	功能相似	LOW POWER NPN SILICON TRANSISTOR
2N3019S	MICROSEMI	功能相似	LOW POWER NPN SILICON TRANSISTOR

与JANS2N3019S相关器件

型号	品牌	获取价格	描述	数据表
JANS2N3057A	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JANS2N3227	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| TO-18
JANS2N3227UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, C
JANS2N3418	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIM
JANS2N3418S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, SI
JANS2N3420S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, SI
JANS2N3421	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 3A I(C) \| TO-5
JANS2N3421S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| TO-5
JANS2N3439	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JANS2N3439E3	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR