JANS2N3501

更新时间： 2024-11-28 22:55:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	63K
描述
NPN SILICON TRANSISTOR

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数据手册
替代型号

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JANS2N3501 数据手册

TECHNICAL DATA

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 366

Devices

Qualified Level

JAN

2N3498

2N3499

2N3500

2N3501

JANTX

2N3498L

2N3499L

2N3500L

2N3501L

JANTXV

JANS

MAXIMUM RATINGS

2N3498^*2N3500^*

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol 2N3499^*2N3501^*

Unit

Vdc

100

6.0

150

6.0

V_CEO

V_CBO

V_EBO

I_C

Vdc

TO-5*

500

300

mAdc

@ T_A= 25⁰C ⁽¹⁾

@ T_C= 25⁰C ⁽²⁾

1.0

5.0

⁰C

2N3498L, 2N3499L

2N3500L, 2N3501L

Total Power Dissipation

P_T

Operating & Storage Junction Temp. Range

-55 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance:

Junction-to-Case

qJC

⁰C/W

TO-39* (TO-205AD)

2N3498, 2N3499

Junction-to-Ambient

175

qJA

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly 5.71 W/⁰C for T_A> 25⁰C

2N3500, 2N3501

2) Derate linearly 28.6 W/⁰C for T_C> 25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

100

150

Vdc

2N3498, 2N3499

2N3500, 2N3501

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 50 Vdc

V_CB= 75 Vdc

V_CB= 100 Vdc

V_CB= 150 Vdc

hAdc

mAdc

2N3498, 2N3499

2N3500, 2N3501

2N3498, 2N3499

2N3500, 2N3501

I_CBO

Emitter-Base Cutoff Current

V_EB= 4.0 Vdc

V_EB= 6.0 Vdc

hAdc

mAdc

I_EBO

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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JANS2N3501 替代型号

型号	品牌	替代类型	描述	数据表
JANTX2N3501L	MICROSEMI	完全替代	NPN SILICON TRANSISTOR
JANTX2N3501	MICROSEMI	完全替代	NPN BIPOLAR TRANSISTOR
JAN2N3501	MICROSEMI	完全替代	NPN SILICON TRANSISTOR

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