Datasheet > JANS2N3501UB

JANS2N3501UB

更新时间： 2024-11-08 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
24页	144K
描述
BJT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANS2N3501UB 数据手册

The documentation and process conversion measures necessary to

comply with this document shall be completed by 4 September, 2002.

INCH-POUND

MIL-PRF-19500/366J

4 June 2002

SUPERSEDING

MIL-PRF-19500/366H

28 June 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER

TYPES 2N3498, 2N3498L, 2N3499, 2N3499L, 2N3500, 2N3500L, 2N3501, 2N3501L, AND 2N3501UB

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

Device types 2N3498, 2N3499, 2N3500 and their corresponding L suffix

versions are inactive for new design after 14 April 1995.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power amplifier and

switching transistors. Four levels of product assurance are provided for each device type as specified in

MIL-PRF-19500. Two levels of product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to TO- 5, 39), figure 2 (surface mount, 2N3501UB), and figures 3

and 4 (die).

1.3 Maximum ratings.

Types

(1)

V_CBO

V_CEO

I_C

R_θJA

T_STGand T_OP

P_T

T_A= +25°C

(2)

V_EBO

V dc

mA dc

°C /W

°C

2N3498

2N3499

2N3500

2N3501

2N3501UB

100

150

100

150

500

300

175

325

-65 to +200

(3) 0.5

(1) Electrical characteristics for "L" suffix devices are identical to their corresponding "non-L" suffix devices.

(2) Derate linearly 5.71 mW/°C for T_A> +25°C.

(3) Derate linearly 3.08 mW/°C for T_A> +25°C, 2N3501UB.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...24

中文翻译

下载PDF

与JANS2N3501UB相关器件

型号	品牌	获取价格	描述	数据表
JANS2N3501UB/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANS2N3506	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 3A I(C) \| TO-5
JANS2N3506A	ETC	获取价格	BJT
JANS2N3506AL	ETC	获取价格	BJT
JANS2N3506L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 3A I(C) \| TO-5
JANS2N3507	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-5
JANS2N3507A	ETC	获取价格	BJT
JANS2N3507AL	ETC	获取价格	BJT
JANS2N3507L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-5
JANS2N3634	MICROSEMI	获取价格	PNP SILICON AMPLIFIER TRANSISTOR