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JANS2N2919

更新时间： 2024-11-27 14:19:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
23页 393K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, HERMETIC SEALED, METAL CAN-8

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JANS2N2919 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：TO-78
包装说明：CYLINDRICAL, O-MBCY-W8针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.21
Is Samacsys：N最大集电极电流 (IC)：0.05 A
集电极-发射极最大电压：60 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：150JEDEC-95代码：TO-78
JESD-30 代码：O-MBCY-W8JESD-609代码：e0
元件数量：2端子数量：8
最高工作温度：175 °C封装主体材料：METAL
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.3 W认证状态：Qualified
参考标准：MIL-19500/355子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
标称过渡频率 (fT)：60 MHzBase Number Matches：1

JANS2N2919 数据手册

 浏览型号JANS2N2919的Datasheet PDF文件第2页浏览型号JANS2N2919的Datasheet PDF文件第3页浏览型号JANS2N2919的Datasheet PDF文件第4页浏览型号JANS2N2919的Datasheet PDF文件第5页浏览型号JANS2N2919的Datasheet PDF文件第6页浏览型号JANS2N2919的Datasheet PDF文件第7页 
The documentation and process conversion measures  
necessary to comply with this document shall be  
completed by 12 June 2013.  
INCH-POUND  
MIL-PRF-19500/355R  
12 March 2013  
SUPERSEDING  
MIL-PRF-19500/355P  
9 December 2011  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,  
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,  
JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR,  
JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH,  
JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH.  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN  
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified  
in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators “M”, “D”, “P“, “L”,  
“R”, “F”, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.  
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and  
JANKCA die), and figure 4 (JANHCB and JANKCB die).  
1.3 Maximum ratings. Unless otherwise specified, TC =+25°C.  
Type  
I
V
V
V
EBO  
C
CBO  
CEO  
mA dc  
30  
V dc  
70  
V dc  
60  
V dc  
6
All types  
P (1)  
P (2)  
R
θJA  
R
θJC  
T
T
TJ and TSTG  
T
= +25°C  
T
= +25°C  
C
A
One  
section  
Both  
sections  
One  
section  
Both  
sections  
One  
section  
Both  
sections  
One  
section  
Both  
sections  
mW  
200  
mW  
mW  
mW  
°C/W  
°C/W  
°C/W  
°C/W  
°C  
350  
300  
450  
875  
500  
583  
388  
-65 to +200  
(1) For TA > +25°C, derate linearly 1.143 mW/°C, one section; 2.000 mW/°C, both sections.  
(2) For TC > +25°C, derate linearly 1.714 mW/°C, one section; 2.571 mW/°C, both sections.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:  
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST Online  
database at https://assist.dla.mil .  
AMSC N/A  
FSC 5961  
1234567...23

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JANS2N2919U MICROSEMI

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JANS2N2920L MICROSEMI

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 		Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
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JANS2N3019 MICROSEMI

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 		LOW POWER NPN SILICON TRANSISTOR
JANS2N3019/TR MICROSEMI

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 		Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-
JANS2N3019S MICROSEMI

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 		LOW POWER NPN SILICON TRANSISTOR
JANS2N3057A MICROSEMI

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 		LOW POWER NPN SILICON TRANSISTOR
JANS2N3227 ETC

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 		TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-18

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