JANS2N2919L

更新时间： 2024-11-28 07:23:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		小信号双极晶体管
页数	文件大小	规格书
23页	393K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, 6 PIN

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JANS2N2919L 数据手册

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 12 June 2013.

INCH-POUND

MIL-PRF-19500/355R

12 March 2013

SUPERSEDING

MIL-PRF-19500/355P

9 December 2011

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,

TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,

JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR,

JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH,

JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN

silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified

in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators “M”, “D”, “P“, “L”,

“R”, “F”, “G” and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.

1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and

JANKCA die), and figure 4 (JANHCB and JANKCB die).

1.3 Maximum ratings. Unless otherwise specified, T_C=+25°C.

Type

EBO

CBO

CEO

mA dc

V dc

All types

P (1)

P (2)

θJA

θJC

T_Jand T_STG

= +25°C

One

section

Both

sections

One

section

Both

sections

One

section

Both

sections

One

section

Both

sections

200

°C/W

°C

350

300

450

875

500

583

388

-65 to +200

(1) For T_A> +25°C, derate linearly 1.143 mW/°C, one section; 2.000 mW/°C, both sections.

(2) For T_C> +25°C, derate linearly 1.714 mW/°C, one section; 2.571 mW/°C, both sections.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:

VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST Online

database at https://assist.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...23

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与JANS2N2919L相关器件

型号	品牌	获取价格	描述	数据表
JANS2N2919U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon,
JANS2N2920	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
JANS2N2920L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
JANS2N2920U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon,
JANS2N3019	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JANS2N3019/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-
JANS2N3019S	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JANS2N3057A	MICROSEMI	获取价格	LOW POWER NPN SILICON TRANSISTOR
JANS2N3227	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| TO-18
JANS2N3227UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, C

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