Datasheet > 2N2905_12

2N2905_12

更新时间： 2024-11-18 12:53:07

品牌	Logo	应用领域
COMSET		晶体晶体管局域网
页数	文件大小	规格书
3页	80K
描述
SILICON PLANAR EPITAXIAL TRANSISTOR

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数据手册

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2N2905_12 数据手册

PNP 2N2905 – 2N2905A

SILICON PLANAR EPITAXIAL TRANSISTOR

The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case .

They are intended for high speed switching and general purpose applications.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

2N2905A

2N2905

2N2905A

2N2905

2N2905A

2N2905

2N2905A

2N2905

2N2905A

2N2905

2N2905A

2N2905

2N2905A

2N2905

2N2905A

2N2905

-60

-40

-60

-5

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

-5

-600

P_D

Total Power Dissipation

Junction Temperature

Storage Temperature range

@ T_amb= 25°

0.6

Watts

P_D

@ T_case= 25°

T_J

200

°C

T_Stg

-65 to +200

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

2N2905A

2N2905

2N2905A

2N2905

Thermal Resistance, Junction to ambient in free

air

R_thJ-a

R_thJ-c

58.3

292

°C/W

Thermal Resistance, Junction to case

COMSET SEMICONDUCTORS

1/3

12 3

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2N2905A	RAYTHEON	获取价格	Medium Current General Purpose Amplifiers and Switches
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2N2905A	NJSEMI	获取价格	Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 Box
2N2905A	COMSET	获取价格	SILICON PLANAR EPITAXIAL TRANSISTORS
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