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2N2904A PDF预览

2N2904A

更新时间: 2024-11-29 22:35:51
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页数 文件大小 规格书
2页 46K
描述
NPN SILICON PLANAR SWITCHING TRANSISTORS

2N2904A 数据手册

 浏览型号2N2904A的Datasheet PDF文件第2页 
PNP SILICON PLANAR SWITCHING TRANSISTORS  
2N2904A  
2N2905A  
TO-39  
Boca Semiconductor Corp.  
BSC  
http://www.bocasemi.com  
Switching And Linear Application DC to VHF Amplifier Applications  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
2N2904A, 05A  
UNIT  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter -Base Voltage  
Collector Current Continuous  
Power Dissipation @Ta=25 degC  
Derate Above 25deg C  
VCEO  
VCBO  
VEBO  
IC  
60  
60  
5.0  
600  
600  
V
V
V
mA  
mW  
PD  
3.43  
3.0  
mW/deg C  
W
@ Tc=25 degC  
PD  
Derate Above 25deg C  
Operating And Storage Junction  
Temperature Range  
17.2  
-65 to +200  
mW/deg C  
deg C  
Tj, Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
VALUE  
MAX  
MIN  
60  
60  
5.0  
-
UNIT  
V
V
V
nA  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter-Base Voltage  
VCEO*  
VCBO  
VEBO  
ICBO  
IC=10mA,IB=0  
IC=10uA.IE=0  
IE=10uA, IC=0  
VCB=50V, IE=0  
-
-
-
Collector-Cut off Current  
10  
Ta=150 deg C  
VCB=50V, IE=0  
VCE=30V, VBE=0.5V  
VCE=30V, VBE=0.5V  
-
-
-
-
10  
50  
50  
0.4  
1.6  
1.3  
2.6  
uA  
nA  
nA  
V
V
V
V
ICEX  
IB  
Base Current  
Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA  
IC=500mA,IB=50mA  
VBE(Sat) * IC=150mA,IB=15mA  
IC=500mA,IB=50mA  
Base Emitter Saturation Voltage  
DC Current Gain  
-
-
2N2904A  
>40  
2N2905A  
>75  
>100  
hFE  
IC=0.1mA,VCE=10V  
IC=1mA,VCE=10V  
>40  
IC=10mA,VCE=10V  
IC=150mA,VCE=10V*  
IC=500mA,VCE=10V*  
>40  
40-120  
>40  
>100  
100-300  
>50  
http://www.bocasemi.com  
page: 1  

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