Datasheet > 2N2904_10

2N2904_10

更新时间： 2024-11-30 07:28:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
4页	159K
描述
PNP SWITCHING SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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2N2904_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/290

DEVICES

LEVELS

JAN

2N2904

2N2905

JANTX

JANTXV

JANS

2N2904A

2N2904AL

2N2905A

2N2905AL

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N2904 2N2904A, L

2N2905 2N2905A, L

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

Unit

V_CEO

V_CBO

V_EBO

I_C

Vdc

Collector-Base Voltage

Emitter-Base Voltage

5.0

600

Vdc

Collector Current

mAdc

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽²⁾

0.8

3.0

P_T

W/°C

Operating & Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

T_J, T_stg

R_θJC

-65 to +200

°C

TO-39 (TO-205AD)

2N2904, 2N2904A

2N2905, 2N2905A

°C/W

NOTES:

1/ Derate linearly 3.43W/°C for T_A> +25°C

2/ Derate linearly 17.2W/°C for T_C> +25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Current

I_C= 10mAdc 2N2904, 2N2905

2N2904A, 2N2905A / AL

Collector-Emitter Cutoff Voltage

Symbol

V_(BR)CEO

I_CES

Min.

Max.

Unit

Vdc

TO-5

V_CE= 40Vdc

V_CE= 60Vdc

2N2904, 2N2905

2N2904A, 2N2905A / AL

2N2904AL, 2N2905AL

1.0

µAdc

Collector-Base Cutoff Current

V_CB= 50Vdc

2N2904, 2N2905

ηAdc

µAdc

2N2904A, 2N2905A / AL

I_CBO

V_CB= 60Vdc

All Types

Emitter-Base Cutoff Current

V_EB= 3.5Vdc

V_EB= 5.0Vdc

ηAdc

µAdc

I_EBO

T4-LDS-0186 Rev. 1 (101764)

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