TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 290
Devices
Qualified Level
JAN
2N2904
2N2904A
2N2904AL
2N2905
2N2905A
2N2905AL
JANTX
JANTXV
JANS
MAXIMUM RATINGS
2N2904 2N2904A, L
Symbol 2N2905 2N2905A, L Unit
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
60
Vdc
VCEO
VCBO
VEBO
IC
60
5.0
600
Vdc
TO-39* (TO-205AD)
2N2904, 2N2904A
2N2905, 2N2905A
Vdc
mAdc
Total Power Dissipation @ TA = +250C (1)
0.6
3.0
W
W
0C
PT
@ TC = +250C (2)
Operating & Storage Junction Temp. Range
-65 to +200
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/mW
Thermal Resistance, Junction-to-Case
0.29
R
qJC
TO-5*
2N2904AL, 2N2905AL
1) Derate linearly 3.43 W/0C for TA > +250C
2) Derate linearly 17.2 W/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N2904, 2N2905
V(BR)
40
60
CEO
2N2904A, L, 2N2905A, L
Collector-Emitter Cutoff Voltage
VCE = 40 Vdc
VCE = 60 Vdc
ICES
2N2904, 2N2905
2N2904A, L, 2N2905A, L
mAdc
1.0
1.0
Collector-Base Cutoff Current
VCB = 50 Vdc
2N2904, 2N2905
2N2904A, L, 2N2905A, L
All Types
20
10
10
hAdc
mAdc
ICBO
VCB = 60 Vdc
Emitter-Base Cutoff Current
VEB = 3.5 Vdc
VEB = 5.0 Vdc
hAdc
mAdc
IEBO
50
10
6 Lake Street, Lawrence, MA 01841
120101
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