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JAN2N2907AUA PDF预览

JAN2N2907AUA

更新时间: 2024-11-01 22:22:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 62K
描述
PNP SMALL SIGNAL SILICON TRANSISTOR

JAN2N2907AUA 数据手册

 浏览型号JAN2N2907AUA的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SMALL SIGNAL SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 291  
Devices  
2N2906A  
Qualified Level  
JAN  
2N2907A  
2N2906AL  
2N2906AUA  
2N2906AUB  
2N2907AL  
2N2907AUA  
2N2907AUB  
JANTX  
JANTXV  
JANS  
MAXIMUM RATINGS  
Ratings  
Symbol  
VCEO  
All Types Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
Vdc  
60  
Vdc  
Vdc  
VCBO  
TO-18* (TO-206AA)  
5.0  
600  
VEBO  
mAdc  
IC  
Total Power Dissipation  
@ TA = +250C  
@ TC = +250C  
0.4  
1.8  
W
W
0C  
(1)  
PT  
(2 / 3)  
4 PIN*  
2N2906AUA, 2N2907AUA  
PT  
TJ, T  
Operating & Storage Junction Temperature Range  
-65 to +200  
stg  
1) Derate linearly 2.28 mW/0C for TA > +250C.  
2) Derate linearly 10.3 mW/0C for TC > +250C.  
3) For UA and UB surface mount case outlines: PT = 1.16 W;  
derate linearly 6.6mW/0C for TC > +250C.  
3 PIN*  
2N2906AUB, 2N2907AUB  
*See appendix A for package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
60  
Vdc  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCE = 50 Vdc  
VCE = 60 Vdc  
Collector-Base Cutoff Current  
VCE = 50 Vdc  
Emitter-Base Cutoff Current  
VEB = 4.0 Vdc  
mAdc  
hAdc  
ICBO  
ICES  
IEBO  
10  
10  
50  
hAdc  
hAdc  
mAdc  
50  
10  
VEB = 5.0 Vdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

JAN2N2907AUA 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N2907AUA MICROSEMI

完全替代

PNP SMALL SIGNAL SILICON TRANSISTOR
JANTX2N2907AUA MICROSEMI

完全替代

PNP SMALL SIGNAL SILICON TRANSISTOR

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