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JAN2N2880 PDF预览

JAN2N2880

更新时间: 2024-11-30 22:29:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 58K
描述
PNP POWER SILICON TRANSISTOR

JAN2N2880 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-59
包装说明:POST/STUD MOUNT, O-MUPM-X3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.22
其他特性:HIGH RELIABILITY最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-59
JESD-30 代码:O-MUPM-X3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Qualified参考标准:MIL-S-19500
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

JAN2N2880 数据手册

 浏览型号JAN2N2880的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 315  
Devices  
Qualified Level  
JAN  
2N2880  
2N3749  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol  
Value  
80  
Units  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
VCEO  
VCBO  
VEBO  
IB  
110  
8.0  
0.5  
5.0  
Collector Current  
IC  
Total Power Dissipation @ TA = 250C (1)  
2.0  
30  
W
PT  
@ TC = 1000C (2)  
-65 to +200  
0C  
Operating & Storage Junction Temperature Range  
Top, T  
stg  
TO-59*  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
Symbol  
Max.  
Unit  
0C/W  
3.33  
R
qJC  
1) Derate linearly 11.4 mW/0C for TA > 250C  
2) Derate linearly 300 mW/0C for TC > 1000C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
Emitter-Base Breakdown to Voltage  
IE = 10 mAdc  
80  
110  
8.0  
Vdc  
Vdc  
V(BR)  
CEO  
V(BR)  
CBO  
Vdc  
V(BR)  
EBO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
Collector-Emitter Cutoff Current  
VCE = 110 Vdc, VBE = -0.5  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
20  
0.2  
1.0  
0.2  
ICEO  
ICBO  
ICEX  
IEBO  
mAdc  
mAdc  
mAdc  
mAdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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