IXYH20N120C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXYH) Outline
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
7.0
11.5
S
Cies
Coes
Cres
1110
120
27
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
P
1
2
3
Qg(on)
Qge
Qgc
53
9
nC
nC
nC
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
22
td(on)
tri
Eon
td(off)
tfi
20
29
ns
ns
mJ
ns
ns
e
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
Terminals: 1 - Gate
3 - Emitter
2 - Collector
1.3
90
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VCE = 0.5 • VCES, RG = 10
108
0.5
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Note 2
Eof
1.0 mJ
f
td(on)
tri
20
40
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
Eon
td(off)
tfi
3.7
115
105
0.7
mJ
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
VCE = 0.5 • VCES, RG = 10
ns
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Note 2
.780 .800
.177
Eoff
mJ
P 3.55
3.65
.140 .144
RthJC
RthCS
0.54 °C/W
°C/W
Q
5.89
6.40 0.232 0.252
0.21
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Value
Symbol
Test Conditions
Min. Typ.
Max.
VF
3.00
V
V
IF = 30A,VGE = 0V, Note 1
TJ = 150°C
1.75
IRM
trr
9
A
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
195
ns
VR = 600V
TJ = 100°C
RthJC
0.90 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537