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IXYH20N120C3D1 PDF预览

IXYH20N120C3D1

更新时间: 2024-01-16 19:49:32
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 215K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYH20N120C3D1 数据手册

 浏览型号IXYH20N120C3D1的Datasheet PDF文件第1页浏览型号IXYH20N120C3D1的Datasheet PDF文件第3页浏览型号IXYH20N120C3D1的Datasheet PDF文件第4页浏览型号IXYH20N120C3D1的Datasheet PDF文件第5页浏览型号IXYH20N120C3D1的Datasheet PDF文件第6页浏览型号IXYH20N120C3D1的Datasheet PDF文件第7页 
IXYH20N120C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXYH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
7.0  
11.5  
S
Cies  
Coes  
Cres  
1110  
120  
27  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
P  
1
2
3
Qg(on)  
Qge  
Qgc  
53  
9
nC  
nC  
nC  
IC = 20A, VGE = 15V, VCE = 0.5 • VCES  
22  
td(on)  
tri  
Eon  
td(off)  
tfi  
20  
29  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 20A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
1.3  
90  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 0.5 • VCES, RG = 10  
108  
0.5  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
1.0 mJ  
f
td(on)  
tri  
20  
40  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 150°C  
IC = 20A, VGE = 15V  
Eon  
td(off)  
tfi  
3.7  
115  
105  
0.7  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 0.5 • VCES, RG = 10  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
mJ  
P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.54 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
(TJ = 25°C, Unless Otherwise Specified)  
Characteristic Value  
Symbol  
Test Conditions  
Min. Typ.  
Max.  
VF  
3.00  
V
V
IF = 30A,VGE = 0V, Note 1  
TJ = 150°C  
1.75  
IRM  
trr  
9
A
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C  
195  
ns  
VR = 600V  
TJ = 100°C  
RthJC  
0.90 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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