Datasheet > IXYH100N65B3

IXYH100N65B3

更新时间： 2024-01-03 09:50:07

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	259K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产，具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。它们具有正集电

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IXYH100N65B3 数据手册

IXYH100N65B3

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

TO-247 (IXYH) Outline

Min.

Typ.

Max.

g_fs

I_C= 60A, V_CE= 10V, Note 1

C_ies

C_oes

C_res

4800

280

V_CE= 25V, V_GE= 0V, f = 1MHz

103

Q_g(on)

Q_ge

Q_gc

168

I_C= 100A, V_GE= 15V, V_CE= 0.5 • V_CES

t_d(on)

t_ri

E_on

t_d(off)

t_fi

1 - Gate

2,4 - Collector

3 - Emitter

Inductive load, T_J= 25°C

I_C= 50A, V_GE= 15V

1.27

150

V_CE= 400V, R_G= 3

Note 2

E_of

1.73

2.00 mJ

t_d(on)

t_ri

E_on

t_d(off)

t_fi

Inductive load, T_J= 150°C

I_C= 50A, V_GE= 15V

2.35

198

160

2.16

V_CE= 400V, R_G= 3

Note 2

E_off

R_thJC

R_thCS

0.18 °C/W

°C/W

0.21

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V_CE(clamp), T_Jor R_G.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4 5 6 7

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