生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | PLASTIC PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 8.54 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 300 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (Abs) (ID): | 48 A | 最大漏极电流 (ID): | 48 A |
最大漏源导通电阻: | 0.03 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 150 W | 最大脉冲漏极电流 (IDM): | 150 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXTA48P05T | IXYS |
类似代替 |
Power Field-Effect Transistor, 48A I(D), 50V, 0.03ohm, 1-Element, P-Channel, Silicon, Meta | |
IXTY48P05T | IXYS |
功能相似 |
Power Field-Effect Transistor, 48A I(D), 50V, 0.03ohm, 1-Element, P-Channel, Silicon, Meta |
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