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IXTA3N60P PDF预览

IXTA3N60P

更新时间: 2024-11-20 03:13:43
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 228K
描述
PolarHVTM Power MOSFET

IXTA3N60P 数据手册

 浏览型号IXTA3N60P的Datasheet PDF文件第2页浏览型号IXTA3N60P的Datasheet PDF文件第3页浏览型号IXTA3N60P的Datasheet PDF文件第4页 
PolarHVTM  
Power MOSFET  
IXTA 3N60P  
IXTP 3N60P  
IXTY 3N60P  
VDSS = 600 V  
ID25 = 3.0 A  
RDS(on) 2.9 Ω  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
600  
600  
V
V
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
(TAB)  
ID25  
IDM  
TC = 25° C  
TC = 25° C, pulse width limited by TJM  
3.0  
6
A
A
TO-220 (IXTP)  
IAR  
EAR  
EAS  
TC =25°C  
TC =25°C  
TC = 25° C  
3
10  
100  
A
mJ  
mJ  
G
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 30 Ω  
5
V/ns  
D
S
(TAB)  
TO-252 (IXTY)  
TC = 25° C  
70  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
(TAB)  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
TO-220  
TO-263  
TO-252  
4
3
0.35  
g
g
g
Features  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Symbol  
Test Conditions  
Characteristic Values  
l
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 50 µA  
600  
V
V
l
Low package inductance  
- easy to drive and to protect  
3.0  
5.5  
VGS  
=
30 VDC, VDS = 0  
100  
nA  
Advantages  
l
Easy to mount  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
50  
µA  
µA  
l
l
TJ = 125° C  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
2.9  
© 2006 IXYS All rights reserved  
DS99449E(04/06)  

IXTA3N60P 替代型号

型号 品牌 替代类型 描述 数据表
IXTY3N60P IXYS

完全替代

Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal
IXTP3N60P IXYS

类似代替

Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal

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