Datasheet > IXTA3N60P

IXTA3N60P

更新时间： 2024-09-29 03:13:43

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	228K
描述
PolarHVTM Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IXTA3N60P 数据手册

PolarHV^TM

Power MOSFET

IXTA 3N60P

IXTP 3N60P

IXTY 3N60P

V_DSS= 600 V

I_D25= 3.0 A

R_DS(on)≤ 2.9 Ω

N-Channel Enhancement Mode

Avalanche Rated

Symbol

Test Conditions

Maximum Ratings

TO-263 (IXTA)

V_DSS

V_DGR

T_J= 25° C to 150° C

T_J= 25° C to 150° C; R_GS= 1 MΩ

600

V_GS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_DM

T_C= 25° C

T_C= 25° C, pulse width limited by T_JM

3.0

TO-220 (IXTP)

I_AR

E_AR

E_AS

T_C=25°C

T_C= 25° C

100

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 30 Ω

V/ns

(TAB)

TO-252 (IXTY)

T_C= 25° C

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

(TAB)

G = Gate

S = Source

D = Drain

TAB = Drain

Weight

TO-220

TO-263

TO-252

0.35

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 50 µA

600

Low package inductance

- easy to drive and to protect

3.0

5.5

V_GS

30 V_DC, V_DS= 0

100

Advantages

Easy to mount

I_DSS

V_DS= V_DSS

V_GS= 0 V

µA

T_J= 125° C

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25, Note 1

2.9

Ω

DS99449E(04/06)

12 3 4

中文翻译

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IXTA3N60P 替代型号

型号	品牌	替代类型	描述	数据表
IXTY3N60P	IXYS	完全替代	Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal
IXTP3N60P	IXYS	类似代替	Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal

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