5秒后页面跳转
IXTA4N150HV PDF预览

IXTA4N150HV

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 开关高压脉冲电源开关调节器
页数 文件大小 规格书
6页 223K
描述
高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉冲电路和电流调节器。 功能与特色: 应用: 优点:

IXTA4N150HV 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.39
JESD-609代码:e3湿度敏感等级:2
端子面层:Matte Tin (Sn)Base Number Matches:1

IXTA4N150HV 数据手册

 浏览型号IXTA4N150HV的Datasheet PDF文件第2页浏览型号IXTA4N150HV的Datasheet PDF文件第3页浏览型号IXTA4N150HV的Datasheet PDF文件第4页浏览型号IXTA4N150HV的Datasheet PDF文件第5页浏览型号IXTA4N150HV的Datasheet PDF文件第6页 
Preliminary Technical Information  
High Voltage  
Power MOSFETs  
VDSS = 1500V  
ID25 = 4A  
RDS(on) 6Ω  
IXTA4N150HV  
IXTT4N150HV  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
TO-263  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1500  
1500  
V
V
VDGR  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
TO-268  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
4
A
A
12  
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
4
A
S
350  
mJ  
D (Tab)  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
5
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
280  
Tab = Drain  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
z
Weight  
TO-263  
TO-268  
2.5  
4.0  
g
g
High Blocking Voltage  
High Voltage Package  
Fast Intrinsic Diode  
z
z
z
Low Package Inductance  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1500  
2.5  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
Applications  
±100 nA  
z
IDSS  
10 μA  
High Voltage Power Supplies  
Capacitor Discharge  
Pulse Circuits  
z
TJ = 125°C  
100 μA  
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
6
Ω
DS100534B(04/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

与IXTA4N150HV相关器件

型号 品牌 获取价格 描述 数据表
IXTA4N60P IXYS

获取价格

Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o
IXTA4N65X2 IXYS

获取价格

Power Field-Effect Transistor,
IXTA4N65X2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA4N70X2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA4N80P IXYS

获取价格

PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTA4N80P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTA50N20P IXYS

获取价格

PolarHT Power MOSFET N-Channel Enhancement Mode
IXTA50N25T IXYS

获取价格

Trench Gate Power MOSFET N-Channel Enhancement Mode
IXTA50N25T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTA52P10P LITTELFUSE

获取价格

Power Field-Effect Transistor,