Datasheet > IXTA4N150HV

IXTA4N150HV

更新时间： 2024-11-06 21:21:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	198K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTA4N150HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.51	JESD-609代码：	e3
湿度敏感等级：	2	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

IXTA4N150HV 数据手册

Preliminary Technical Information

High Voltage

Power MOSFETs

V_DSS= 1500V

I_D25= 4A

R_DS(on)≤ 6Ω

IXTA4N150HV

IXTT4N150HV

N-Channel Enhancement Mode

Fast Intrinsic Diode

TO-263

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1500

V_DGR

D (Tab)

V_GSS

V_GSM

Continuous

Transient

±30

±40

TO-268

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25°C

350

D (Tab)

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

G = Gate

S = Source

= Drain

280

Tab = Drain

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

Weight

TO-263

TO-268

2.5

4.0

High Blocking Voltage

High Voltage Package

Fast Intrinsic Diode

Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1500

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

Applications

±100 nA

I_DSS

10 μA

High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

T_J= 125°C

100 μA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

DS100534B(04/13)

12 3 4 5

中文翻译

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