Datasheet > IXKN75N60C

IXKN75N60C

更新时间： 2024-02-21 15:53:52

品牌	Logo	应用领域
力特 - LITTELFUSE		散热片
页数	文件大小	规格书
5页	283K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。这些器件经过了雪崩评级，因此可确保稳定可靠的运行。功能与特色: 应用: 优点:

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IXKN75N60C 数据手册

IXKN 75N60C

360

320

280

240

200

160

120

V_GS= 10V

V_DS= 350V

tp = 300µs

_D= 80A

_G= 10mA

12 14

60 120 180 240 300 360 420 480 540

_{D S}- Volts

Q _G- nanoCoulombs

Fig. 7 Typ. turn-on gate charge characteristics

Fig. 8 Forward Safe Operating Area, I_D= f (V_DS)

200

100000

10000

1000

100

f = 1MHz

180

160

140

120

100

iss

oss

T_J= 125ºC

T_J= 25ºC

rss

0.4

0.5

0.6

0.7

0.8

0.9

1.1

10 20 30 40 50 60 70 80 90 100

V_DS- Volts

V_{S D}- Volts

Fig. 9 Typ. capacitances C = f (V_DS), f = 1 MHz

Fig. 10 Typ. forward characteristics of reverse diode, I_S= f (V_SD)

180

160

140

120

100

T_J= -40ºC

25ºC

125ºC

120 150 180 210 240

I _D- Amperes

Fig. 11 Typical transconductance gfs = f (I_D)

Fig. 12 Transient thermal resistance Z_thJK= f (tp)

IXYS reserves the right to change limits, test conditions and dimensions.

20100609c

4 - 4

1 2 345

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