Datasheet > IXKN75N60C

IXKN75N60C

更新时间： 2024-02-21 15:53:52

品牌	Logo	应用领域
力特 - LITTELFUSE		散热片
页数	文件大小	规格书
5页	283K
描述
此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS(on)。内部DCB隔离简化了组装并减小了从结到散热片之间的热阻。这些器件经过了雪崩评级，因此可确保稳定可靠的运行。功能与特色: 应用: 优点:

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IXKN75N60C 数据手册

IXKN 75N60C

Source-Drain Diode

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise speciﬁed)

min. typ. max.

I_S

V_GS= 0 V

250

1.2

I_SM

V_SD

I_F= 85 A; V_GS= 0 V

t_rr

Q_RM

I_RM

580

140

µC

I_F= 85 A; -di_F/dt = 200 A/µs; V_R= 350 V

Component

Symbol

Conditions

Maximum Ratings

T_VJ

T_stg

operating

-55...+150

-55...+125

°C

M_d

mounting torque

terminal connection torque (M4)

1.5

Symbol

Conditions

Characteristic Values

min. typ. max.

R_thCH

with heatsink compound

0.1

K/W

Weight

miniBLOC, SOT-227 B Outline

SYM MILLIMETERS INCHES

MIN MAX MIN MAX

31.50 31.88 1.240 1.255

7.80 8.20 .307 .323

4.09 4.29 .161 .169

14.91 15.11 .587 .595

30.12 30.30 1.186 1.193

37.80 38.23 1.489 1.505

11.68 12.22 .460 .481

8.92 9.60 .351 .378

0.76 0.84 .030 .033

12.60 12.85 .496 .506

25.15 25.42 .990 1.001

1.98 2.13 .078 .084

4.95 5.97 .195 .235

26.54 26.90 1.045 1.059

3.94 4.42 .155 .174

4.72 4.85 .186 .191

24.59 25.07 .968 .987

Nut M4 DIN 934

Lens Head Screw M4x8

DIN 7985

-.05 .10

3.30 4.57 .130 .180

19.81 21.08 .780 .830

-.002 .004

IXYS reserves the right to change limits, test conditions and dimensions.

20100609c

2 - 4

123 4 5

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