Datasheet > IXKP30N60C5M

IXKP30N60C5M

更新时间： 2024-11-18 21:15:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	102K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXKP30N60C5M 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

IXKP30N60C5M 数据手册

IXKP 30N60C5M

I_D25

V_DSS

10A

COOLMOS Power MOSFET

= 600V

R_{DS(on) max}= 0.125Ω

Fully isolated package

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

Ultra low gate charge

TO-220 FP

Preliminary data

Features

MOSFET

• fast COOLMOS power MOSFET - 4th

generation

- High blocking capability

- Lowest resistance

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C

600

V_GS

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

• Enhanced total power density

I_D25

I_D90

T_C= 25°C

T_C= 90°C

E_AS

E_AR

single pulse

repetitive

708

1.2

I_D= 11 A; T_C= 25°C

dV/dt

MOSFET dV/dt ruggedness V_DS= 0...480 V

50 V/ns

Applications

• Switched mode power supplies

(SMPS)

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise speciﬁed)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

min. typ. max.

R_DSon

V_GS= 10 V; I_D= 16 A

110

125

mΩ

• Inductive heating

• PDP and LCD adapter

V_GS(th)

I_DSS

V_DS= V_GS; I_D= 1.1 mA

V_DS= 600 V; V_GS= 0 V

2.5

3.5

T_VJ= 25°C

T_VJ= 125°C

µA

tbd

COOLMOS is a trademark of

Inﬁneon Technologies AG.

I_GSS

V_GS

20 V; V_DS= 0 V

100

C_iss

C_oss

V_GS= 0 V; V_DS= 100 V

f = 1 MHz

2500

120

Q_g

Q_gs

Q_gd

V_GS= 0 to 10 V; V_DS= 400 V; I_D= 16 A

t_d(on)

t_r

t_d(off)

t_f

tbd

V_GS= 10 V; V_DS= 400 V

I_D= 16 A; R_G= 3.3 Ω

R_thJC

3.5 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

20080310a

1 - 4

12 3 4

中文翻译

下载PDF

与IXKP30N60C5M相关器件

型号	品牌	获取价格	描述	数据表
IXKP35N60C5	IXYS	获取价格	Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IXKP35N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IXKP35N60C5M	IXYS	获取价格	Transistor
IXKR25N80C	IXYS	获取价格	Advanced Technical Information CoolMOS Power MOSFETin ISOPLUS247 Package
IXKR25N80C	LITTELFUSE	获取价格	此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS
IXKR40N60	IXYS	获取价格	CoolMOS Power MOSFET in ISOPLUS247 Package
IXKR40N60C	IXYS	获取价格	CoolMOS Power MOSFET in ISOPLUS247 Package
IXKR40N60C	LITTELFUSE	获取价格	此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS
IXKR47N60C5	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXKR47N60C5	IXYS	获取价格	Power Field-Effect Transistor, 47A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Me