Datasheet > IXKP30N60C5

IXKP30N60C5

更新时间： 2024-01-31 12:54:41

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关晶体管
页数	文件大小	规格书
4页	125K
描述
Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXKP30N60C5 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

IXKP30N60C5 数据手册

IXKH 30N60C5

IXKP 30N60C5

Advanced Technical Information

I_D25

V_DSS

= 30 A

= 600 V

CoolMOS Power MOSFET

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

Ultra low gate charge

R_DS(on)max= 0.125 Ω

TO-247 AD (IXKH)

D(TAB)

TO-220 AB (IXKP)

D(TAB)

Features

MOSFET

• fast CoolMOS power MOSFET - 4^thgeneration

- High blocking capability

- Lowest resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C

600

V_GS

due to reduced chip thickness

• Enhanced total power density

I_D25

I_D90

T_C= 25°C

T_C= 90°C

Applications

E_AS

E_AR

single pulse

repetitive

708 mJ

1.2 mJ

I_D= 11 A; T_C= 25°C

• Switched mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

• PDP and LCD adapter

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

min.

typ. max.

CoolMOS is a trademark of

Infineon Technologies AG.

R_DSon

V_GSth

I_DSS

V_GS= 10 V;I_D= 16 A

V_DS= V_GS;I_D= 1.1 mA

110 125 mΩ

2.5

3.5

V_DS= 600 V;V_GS= 0 V; T_VJ= 25°C

T_VJ= 150°C

µA

tbd

I_GSS

V_GS= 20 V; V_DS= 0 V

100 nA

C_iss

C_oss

V_GS= 0 V; V_DS= 100 V

f = 1 MHz

2500

120

Q_g

Q_gs

Q_gd

70 nC

V_GS= 0 to10 V; V_DS= 400 V; I_D= 16 A

t_d(on)

t_r

t_d(off)

t_f

tbd

V_GS= 10 V; V_DS= 400 V

I_D= 16 A; R_G= 3.3 Ω

R_thJC

0.4 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 4

12 3 4

下载PDF

与IXKP30N60C5相关器件

型号	品牌	描述	获取价格	数据表
IXKP30N60C5M	IXYS	Transistor	获取价格
IXKP35N60C5	IXYS	Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
IXKP35N60C5	LITTELFUSE	Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
IXKP35N60C5M	IXYS	Transistor	获取价格
IXKR25N80C	IXYS	Advanced Technical Information CoolMOS Power MOSFETin ISOPLUS247 Package	获取价格
IXKR25N80C	LITTELFUSE	此系列基于超级结技术的功率MOSFET拥有600V-800V级别MOSFET中最低的RDS	获取价格