IXGH64N60A3
IXGT64N60A3
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
gfS
IC = 50A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
40
70
S
Cies
Coes
Cres
4850
270
66
pF
pF
pF
∅ P
1
2
3
Qg
167
28
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
60
e
td(on)
tri
26
40
ns
ns
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Inductive load, TJ = 25°C
Dim.
Millimeter
Inches
Min. Max.
Eon
td(off)
tfi
1.42
268
222
3.28
mJ
ns
Min. Max.
IC = 50A, VGE = 15V
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VCE = 480V, RG = 3Ω
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Eoff
mJ
td(on)
tri
25
40
ns
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
Eon
td(off)
tfi
2.76
415
362
6.00
mJ
ns
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
VCE = 480V, RG = 3Ω
ns
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Eoff
mJ
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
RthJC
RthCS
0.27 °C/W
°C/W
0.25
TO-268 (IXGT) Outline
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2