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IXGH64N60A3 PDF预览

IXGH64N60A3

更新时间: 2024-04-09 18:40:57
品牌 Logo 应用领域
力特 - LITTELFUSE 超快恢复二极管局域网开关瞄准线双极性晶体管功率控制
页数 文件大小 规格书
7页 268K
描述
IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对UPS、离线式开关电源和电磁炉等高达100kHz的高速应用进行了优化。 G系列可提供带集成式超快恢复二极管(FRED)或不带FRED的型号。

IXGH64N60A3 数据手册

 浏览型号IXGH64N60A3的Datasheet PDF文件第1页浏览型号IXGH64N60A3的Datasheet PDF文件第3页浏览型号IXGH64N60A3的Datasheet PDF文件第4页浏览型号IXGH64N60A3的Datasheet PDF文件第5页浏览型号IXGH64N60A3的Datasheet PDF文件第6页浏览型号IXGH64N60A3的Datasheet PDF文件第7页 
IXGH64N60A3  
IXGT64N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
gfS  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
40  
70  
S
Cies  
Coes  
Cres  
4850  
270  
66  
pF  
pF  
pF  
P  
1
2
3
Qg  
167  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
60  
e
td(on)  
tri  
26  
40  
ns  
ns  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
Inductive load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
Min. Max.  
Eon  
td(off)  
tfi  
1.42  
268  
222  
3.28  
mJ  
ns  
Min. Max.  
IC = 50A, VGE = 15V  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VCE = 480V, RG = 3Ω  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
mJ  
td(on)  
tri  
25  
40  
ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
2.76  
415  
362  
6.00  
mJ  
ns  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
VCE = 480V, RG = 3Ω  
ns  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Eoff  
mJ  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
0.25  
TO-268 (IXGT) Outline  
Note 1: Pulse test, t 300μs, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  

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