Advance Technical Information
X-Class HiPerFETTM
Power MOSFET
VDSS = 1000V
ID25 = 26A
RDS(on) 320m
IXFT26N100XHV
IXFH26N100X
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV
(IXFT)
G
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25C to 150C
1000
1000
V
V
D (Tab)
VDGR
TJ = 25C to 150C, RGS = 1M
TO-247
(IXFH)
VGSS
VGSM
Continuous
Transient
30
40
V
V
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
26
52
A
A
G
D
IA
TC = 25C
TC = 25C
8
2
A
J
S
D (Tab)
= Drain
EAS
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
50
V/ns
W
G = Gate
S = Source
D
Tab = Drain
860
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in
Weight
TO-268HV
TO-247
4
6
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
1000
V
V
Applications
3.5
6.0
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
IDSS
25 A
3 mA
TJ = 125C
Robotics and Servo Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
320 m
DS100935A(9/18)
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