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IXFT26N50 PDF预览

IXFT26N50

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 738K
描述
功能与特色: 应用: 优点:

IXFT26N50 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:5.76其他特性:AVALANCHE RATED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):26 A
最大漏极电流 (ID):26 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-268
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):104 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFT26N50 数据手册

 浏览型号IXFT26N50的Datasheet PDF文件第2页浏览型号IXFT26N50的Datasheet PDF文件第3页浏览型号IXFT26N50的Datasheet PDF文件第4页浏览型号IXFT26N50的Datasheet PDF文件第5页 
VDSS ID25 RDS(on)  
HiPerFETTM  
Power MOSFETs  
IXFH/IXFM21N50  
IXFH/IXFM/IXFT24N50  
IXFH/IXFT26N50  
500 V 21 A 0.25 Ω  
500 V 24 A 0.23 Ω  
500 V 26 A 0.20 Ω  
N-ChannelEnhancementMode  
Highdv/dt, Lowtrr, HDMOSTM Family  
t 250 ns  
rr  
Obsolete:  
IXFM21N50  
IXFM24N50  
TO-247 AD (IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
TO-268 (D3) Case Style  
ID25  
IDM  
IAR  
TC = 25°C  
21N50  
24N50  
26N50  
21N50  
24N50  
26N50  
21N50  
21  
24  
26  
84  
96  
104  
21  
24  
A
A
A
A
A
A
A
A
A
G
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
S
(TAB)  
TO-204 AE (IXFM)  
24N50  
.
Package not  
available  
26N50  
26  
EAR  
TC = 25°C  
30  
5
mJ  
G
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
D
G = Gate,  
D = Drain,  
S = Source,  
TAB = Drain  
PD  
TC = 25°C  
300  
W
Features  
• International standard packages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
• Low R  
HDMOSTM process  
-55 ... +150  
• RuggeDdS (pono)lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Applications  
• DC-DC converters  
• Synchronous rectification  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• DC choppers  
• AC motor control  
• Temperature and lighting controls  
• Low voltage relays  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
2
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
4
Advantages  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
200 µA  
• Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
• High power surface mountable package  
• High power density  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
© 1999 IXYS All rights reserved  
91525H (9/99)  

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