Datasheet > IXFH14N100Q2_08

IXFH14N100Q2_08

更新时间： 2024-11-18 11:57:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	146K
描述
HiPerFET Power MOSFETs Q2-Class

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中文翻译

获取价格

数据手册

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IXFH14N100Q2_08 数据手册

Preliminary Technical Information

HiPerFET^TM

PowerMOSFETs

Q2-Class

IXFH14N100Q2

V_DSS

I_D25

= 1000V

= 14A

R_DS(on)≤ 950mΩ

t_rr

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q_g

Low intrinsic R_g, low t_rr

TO-247(IXFH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

(TAB)

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C=25°C

T_C= 25°C, pulse width limited by T_JM

G = Gate

S = Source

= Drain

TAB = Drain

I_A

T_C=25°C

E_AS

dV/dt

P_D

T_C=25°C

2.5

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C=25°C

V/ns

500

Features

T_J

-55 ... +150

150

°C

^ꢀDouble metal process for low gate

resistance

T_JM

T_stg

^ꢀInternational standard package

^ꢀEpoxymeetUL94V-0, flammability

classification

-55 ... +150

T_L

1.6mm (0.063 in) from case for 10s

Mountingtorque

300

°C

M_d

1.13/10

Nm/lb.in.

^ꢀAvalanche energy and current rated

^ꢀFast intrinsic Rectifier

Weight

Applications

ꢀ

DC-DCconverters

Switched-mode and resonant-mode

ꢀ

power supplies, >500kHz switching

DCchoppers

Pulsegeneration

Laserdrivers

ꢀ

Symbol

TestConditions

CharacteristicValues

ꢀ

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

ꢀ

V_DSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

1000

3.0

V_GS(th)

5.5

Advantages

I_GSS

I_DSS

V_GS= ±30V, V_DS= 0V

±200 nA

25 μA

ꢀ

V_DS= V_DSS

V_GS=0V

Easy to mount

Spacesavings

ꢀ

T_J= 125°C

ꢀ

High power density

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25,Note 1

950 mΩ

DS99073A(5/08)

12 3 4

中文翻译

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