Datasheet > IXFH14N80P

IXFH14N80P

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	292K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFH14N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXFH 14N80P

IXFQ 14N80P

IXFT 14N80P

IXFV 14N80P

IXFV 14N80PS

V_DSS= 800 V

I_D25= 14 A

R_DS(on)≤ 720 mΩ

t_rr≤ 250 ms

Fast Intrinsic Diode

TO-247 (IXFH)

Symbol

Test Conditions

Maximum Ratings

D (TAB)

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C; R_GS= 1 MΩ

800

TO-3P (IXFQ)

V_GS

V_GSM

Continuous

Transient

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

(TAB)

I_AR

E_AR

E_AS

T_C= 25°C

500

TO-268 (IXFT)

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 5 Ω

V/ns

D (TAB)

T_C= 25°C

400

PLUS220 (IXFV)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

PLUS220SMD (IXFV...S)

M_d

Mounting torque (TO-247, TO-3P)

1.13/10 Nm/lb.in.

Weight

PLUS220, PLUS220 SMD

TO-268, TO-3P

TO-247

5.5

D (TAB)

G = Gate

D = Drain

S = Source

TAB = Drain

Symbol

Test Conditions

Characteristic Values

Features

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250μA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V, V_DS= 0 V

800

3.0

5.5

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

Advantages

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

720 mΩ

Easy to mount

Space savings

High power density

DS99593E(07/06)

12 3 4 5 6

中文翻译

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