Datasheet > IXFA5N100P

IXFA5N100P

更新时间： 2024-02-23 13:41:44

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	154K
描述
Polar Power MOSFET HiPerFET

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IXFA5N100P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

IXFA5N100P 数据手册

IXFA5N100P IXFH5N100P

IXFP5N100P

Symbol

Test Conditions

Characteristic Values

TO-247 (IXFH) Outline

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max

g_fs

V_DS= 20V, I_D= 0.5 • I_D25, Note 1

2.4

4.0

1.6

R_Gi

Gate input resistance

C_iss

C_oss

C_rss

1830

113

∅ P

V_GS= 0V, V_DS= 25V, f = 1MHz

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 5Ω (External)

Dim.

Millimeter

Inches

Q_g(on)

Q_gs

33.4

10.6

14.4

Min. Max.

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

R_thJC

0.50 °C/W

R_thCS

(TO-220)

(TO-247)

0.50

0.25

°C/W

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

Source-Drain Diode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

∅P 3.55

3.65

.140 .144

Symbol

I_S

Test Conditions

Min.

Typ.

Max.

5.89

6.40 0.232 0.252

4.32

5.49

.170 .216

242 BSC

V_GS= 0V

6.15 BSC

I_SM

Repetitive, pulse width limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

1.3

TO-220 (IXFP) Outline

V_SD

t_rr

200

I_F= 5A, V_GS= 0V

I_RM

Q_RM

7.4

-di/dt = 100A/μs

V_R= 100V

0.43

μC

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

TO-263 (IXFA) Outline

Pins: 1 - Gate

2 - Drain

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463 6,771,478B2 7,071,537

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

123 4

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与IXFA5N100P相关器件

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