Datasheet > ISL9K30120G3

ISL9K30120G3

更新时间： 2024-09-18 22:26:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管
页数	文件大小	规格书
6页	142K
描述
30A, 1200V Stealth⑩ Dual Diode

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ISL9K30120G3 数据手册

May 2002

ISL9K30120G3

30A, 1200V Stealth™ Dual Diode

General Description

Features

•

Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 4.5

b a

The ISL9K30120G3 is a Stealth™ dual diode optimized for low

loss performance in high frequency hard switched applications.

The Stealth™ family exhibits low reverse recovery current

Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 56ns

Operating Temperature . . . . . . . . . . . . . . . . . . . . 150 C

) and exceptionally soft recovery under typical

RM(REC)

Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V

Avalanche Energy Rated

operating conditions.

This device is intended for use as a free wheeling or boost

diode in power supplies and other power switching

Applications

applications. The low I

and short t phase reduce loss

RM(REC)

•

Switch Mode Power Supplies

Hard Switched PFC Boost Diode

UPS Free Wheeling Diode

Motor Drive FWD

in switching transistors. The soft recovery minimizes ringing,

expanding the range of conditions under which the diode may

be operated without the use of additional snubber circuitry.

Consider using the Stealth™ diode with a 1200V NPT IGBT to

provide the most efficient and highest power density design at

lower cost.

SMPS FWD

Formerly developmental type TA49415.

• Snubber Diode

Package

Symbol

JEDEC STYLE TO-247

ANODE 2

CATHODE

ANODE 1

CATHODE

(BOTTOM SIDE

METAL)

Device Maximum Ratings (per leg) T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

1200

Units

Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

1200

Average Rectified Forward Current (T = 80 C)

Total Device Current (Both Legs)

F(AV)

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

325

FRM

FSM

166

°C

Avalanche Energy (1A, 40mH)

AVL

T , T

Operating and Storage Temperature Range

-55 to 150

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Application Note AN-7528

300

260

°C

PKG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ISL9K30120G3 Rev. A

12 3 4 5 6

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与ISL9K30120G3相关器件

型号	品牌	获取价格	描述	数据表
ISL9K3060G3	FAIRCHILD	获取价格	30A, 600V Stealth⑩ Dual Diode
ISL9K3060G3	ONSEMI	获取价格	60A，600V，STEALTH™ 双二极管
ISL9K460P3	FAIRCHILD	获取价格	4A, 600V Stealth⑩ Dual Diode
ISL9K460P3	ONSEMI	获取价格	8 A、600 V STEALTH™ 双二极管
ISL9K8120P3	FAIRCHILD	获取价格	8A, 1200V Stealth⑩ Dual Diode
ISL9K8120P3_NL	FAIRCHILD	获取价格	Rectifier Diode, Avalanche, 1 Phase, 2 Element, 8A, 1200V V(RRM), Silicon, TO-220AB, LEAD
ISL9K860P3	FAIRCHILD	获取价格	8A, 600V Stealth⑩ Dual Diode
ISL9N2357D3ST	FAIRCHILD	获取价格	30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET
ISL9N302AP3	FAIRCHILD	获取价格	N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N302AS3ST	FAIRCHILD	获取价格	N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

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