Datasheet > ISL9N305ASK8T

ISL9N305ASK8T

更新时间： 2024-09-19 23:59:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关光电二极管
页数	文件大小	规格书
11页	298K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 18A I(D) \| SO

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ISL9N305ASK8T 数据手册

October 2002

ISL9N305ASK8T

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET

General Description

Features

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

•

Fast switching

= 0.004Ω (Typ), V = 10V

DS(ON)

= 0.0064Ω (Typ), V = 4.5V

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

Q (Typ) = 38nC, V = 5V

(Typ) = 11.5nC

ISS

Applications

•

DC/DC converters

(Typ) = 4260pF

Branding Dash

SOURCE (1)

SOURCE (2)

SOURCE (3)

GATE (4)

DRAIN (8)

DRAIN (7)

DRAIN (6)

DRAIN (5)

SO-8

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 4.5V)

Pulsed

Figure 4

Power dissipation

Derate above 25 C

2.5

mW/ C

T , T

Operating and Storage Temperature

-55 to 150

STG

Thermal Characteristics

FR-4 board with 0.76 in ( 490 mm ) copper pad at 10 seconds

C/W

θJA

FR-4 board with 0.054 in ( 34.8 mm ) copper pad at 1000 seconds

152

189

FR-4 board with 0.0115 in ( 7.42 mm ) copper pad at 1000 seconds

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

N305ASK8

ISL9N305ASK8T

330mm

12mm

2500units

ISL9N305ASK8T Rev A1

12 3 4 5 6 7...11

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