Datasheet > ISL9N306AD3ST

ISL9N306AD3ST

更新时间： 2024-10-15 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	525K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:50A;Vgs(th)(V):±20;漏源导通电阻:6mΩ@10V;漏源导通电阻:9.5mΩ@4.5V

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ISL9N306AD3ST 数据手册

9N306AD

30V N-Channel MOSFET

UMW

General Description

This device employs a new advanced trench technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

Applications

• DC/DC converters

Features

•

V_DS(V) = 30V

I_D=50A (V_GS= 10V)

R_DS(ON)<5.2mΩ (V _GS= 10V)

R_DS(ON)<8.5mΩ (V _GS= 4.5V)

•

• Q (Typ) = 30nC, V_GS= 5V

• Q _gd(Typ) = 11nC

• C _ISS(Typ) = 3400pF

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_C= 25^oC, V_GS= 10V)

Continuous (T_C= 100^oC, V_GS= 4.5V)

Continuous (T_C= 25^oC, V_GS= V, R_θJC= 52^oC/W)

Pulsed

I_D

Figure 4

Power dissipation

Derate above 25^oC

125

0.83

P_D

W/^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 175

^oC

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case TO-252

1.2

100

^oC/W

Thermal Resistance Junction to Ambient TO-252

Thermal Resistance Junction to Ambient TO-252, 1in²copper pad area

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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