Datasheet > ISL9N306AS3STS62Z

ISL9N306AS3STS62Z

更新时间： 2024-09-21 10:32:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	205K
描述
Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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February 2002

ISL9N306AP3/ISL9N306AS3ST

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description

Features

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

•

Fast switching

= 0.0052Ω (Typ), V = 10V

DS(ON)

= 0.0085Ω (Typ), V = 4.5V

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

Q (Typ) = 30nC, V = 5V

(Typ) = 11nC

Applications

•

DC/DC converters

(Typ) = 3400pF

ISS

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

TO-263AB

TO-220AB

MOSFET Maximum Ratings ^T= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 4.5V)

C GS

Continuous (T = 25 C, V = V, R = 43 C/W)

θJC

Pulsed

Figure 4

Power dissipation

Derate above 25 C

125

0.83

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-263

1.2

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-220, TO-263

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

Package Marking and Ordering Information

Device Marking

N306AS

Device

Package

TO-263AB

TO-220AB

Reel Size

330mm

Tube

Tape Width

Quantity

800 units

50 units

ISL9N306AS3ST

ISL9N306AP3

24mm

N/A

N306AP

Rev. B, February 2002

12 3 4 5 6 7...11

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