生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.83 |
其他特性: | SNUBBER DIODE, FREE WHEELING DIODE | 应用: | FAST SOFT RECOVERY |
外壳连接: | CATHODE | 配置: | COMMON CATHODE, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 最大非重复峰值正向电流: | 100 A |
元件数量: | 2 | 相数: | 1 |
端子数量: | 3 | 最大输出电流: | 8 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 1200 V | 最大反向恢复时间: | 0.044 µs |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ISL9K860P3 | FAIRCHILD |
获取价格 |
8A, 600V Stealth⑩ Dual Diode | |
ISL9N2357D3ST | FAIRCHILD |
获取价格 |
30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET | |
ISL9N302AP3 | FAIRCHILD |
获取价格 |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs | |
ISL9N302AS3ST | FAIRCHILD |
获取价格 |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs | |
ISL9N302AS3ST_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me | |
ISL9N302AS3STL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me | |
ISL9N302AS3STS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me | |
ISL9N303AP3 | FAIRCHILD |
获取价格 |
N-Channel Logic Level UltraFET Trench MOSFETs | |
ISL9N303AP3 | ROCHESTER |
获取价格 |
75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | |
ISL9N303AP3_NL | ROCHESTER |
获取价格 |
75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN |