是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | TO-220AB, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.18 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.005 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | COMMERCIAL |
表面贴装: | NO | 端子面层: | TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ISL9N303AS3 | FAIRCHILD |
获取价格 |
N-Channel Logic Level UltraFET Trench MOSFETs | |
ISL9N303AS3_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N303AS3ST | FAIRCHILD |
获取价格 |
N-Channel Logic Level UltraFET Trench MOSFETs | |
ISL9N303AS3ST | ROCHESTER |
获取价格 |
75A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | |
ISL9N303AS3ST_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N303AS3STL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N303AS3STL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N303AS3STS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N304AP3 | FAIRCHILD |
获取价格 |
N-Channel Logic Level UltraFET Trench MOSFETs | |
ISL9N304AS3ST | FAIRCHILD |
获取价格 |
N-Channel Logic Level UltraFET Trench MOSFETs |