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ISL9K8120P3 PDF预览

ISL9K8120P3

更新时间： 2024-11-07 22:26:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
6页 137K
描述
8A, 1200V Stealth⑩ Dual Diode

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中文翻译

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ISL9K8120P3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.23其他特性：SNUBBER DIODE, FREE WHEELING DIODE
应用：FAST SOFT RECOVERY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：3.1 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大非重复峰值正向电流：100 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：1200 V最大反向恢复时间：0.044 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

ISL9K8120P3 数据手册

 浏览型号ISL9K8120P3的Datasheet PDF文件第2页浏览型号ISL9K8120P3的Datasheet PDF文件第3页浏览型号ISL9K8120P3的Datasheet PDF文件第4页浏览型号ISL9K8120P3的Datasheet PDF文件第5页浏览型号ISL9K8120P3的Datasheet PDF文件第6页 
May 2002  
ISL9K8120P3  
8A, 1200V Stealth™ Dual Diode  
General Description  
Features  
•
•
•
•
•
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 5.5  
b a  
The ISL9K8120P3 is a Stealth™ dual diode optimized for low  
loss performance in high frequency hard switched applications.  
The Stealth™ family exhibits low reverse recovery current  
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 32ns  
rr  
o
Operating Temperature . . . . . . . . . . . . . . . . . . . . 150 C  
(I  
) and exceptionally soft recovery under typical  
RM(REC)  
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V  
Avalanche Energy Rated  
operating conditions.  
This device is intended for use as a free wheeling or boost  
diode in power supplies and other power switching  
Applications  
applications. The low I  
and short t phase reduce loss  
RM(REC)  
a
•
•
•
•
•
•
Switch Mode Power Supplies  
Hard Switched PFC Boost Diode  
UPS Free Wheeling Diode  
Motor Drive FWD  
in switching transistors. The soft recovery minimizes ringing,  
expanding the range of conditions under which the diode may  
be operated without the use of additional snubber circuitry.  
Consider using the Stealth™ diode with a 1200V NPT IGBT to  
provide the most efficient and highest power density design at  
lower cost.  
SMPS FWD  
Snubber Diode  
Formerly developmental type TA49413.  
Package  
Symbol  
JEDEC TO-220AB  
K
ANODE 2  
CATHODE  
ANODE 1  
CATHODE  
(FLANGE)  
A1  
A2  
Device Maximum Ratings (per leg) T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
1200  
Units  
V
Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
RRM  
RWM  
V
1200  
V
1200  
R
o
I
Average Rectified Forward Current (T = 105 C)  
8
16  
A
A
F(AV)  
C
Total Device Current (Both Legs)  
I
Repetitive Peak Surge Current (20kHz Square Wave)  
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
16  
100  
A
A
FRM  
I
FSM  
P
71  
W
mJ  
°C  
D
E
Avalanche Energy (1A, 40mH)  
20  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 150  
J
STG  
T
Maximum Temperature for Soldering  
L
T
Leads at 0.063in (1.6mm) from Case for 10s  
Package Body for 10s, See Application Note AN-7528  
300  
260  
°C  
°C  
PKG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2002 Fairchild Semiconductor Corporation  
ISL9K8120P3 Rev. A  
123456

中文翻译

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ISL9K8120P3 替代型号

型号 品牌 替代类型 描述 数据表
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