Datasheet > ISL9G2060ES3

ISL9G2060ES3

更新时间： 2024-09-18 23:59:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管功率控制瞄准线双极性晶体管栅
页数	文件大小	规格书
11页	160K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 35A I(C) \| TO-263AB

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数据手册

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ISL9G2060ES3 数据手册

ISL9G2060EG3, ISL9G2060EP3, ISL9G2060ES3

Data Sheet

January 2001

File Number 5021

600V, SMPS II LGC Series N-Channel IGBT

Features

[ /Title

(ISL9

G2060

EG3,

ISL9G

2060E

P3,

ISL9G

2060E

S3)

The ISL9G2060EG3, ISL9G2060EP3, and ISLPG2060ES3

are a Low Gate Charge (LGC) SMPS II IGBT combine the

fast switching speed of the SMPS IGBTs along with lower

gate charge and avalanche capability (UIS). These LGC

devices shorten delay times, and reduce the power

requirement of the gate drive. These devices are ideally

suited for high voltage switched mode power supply

applications where low conduction loss, fast switching times

and UIS capability are essential. SMPS II LGC devices have

been specially designed for:

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . .75ns at T = 125 C

• Low Gate Charge. . . . . . . . . . . . . . . . .37nC at V = 15V

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .260mJ

• Low Conduction Loss

• Power Factor Correction (PFC) Circuits

• Full Bridge Topologies

• Half Bridge Topologies

• Push-Pull Circuits

Symbol

/Subjec

(600V,

SMPS

II LGC

Series

N-

Chann

IGBT)

/Autho

r ()

• Uninterruptible Power Supplies

• Zero Voltage and Zero Current Switching Circuits

Formerly Developmental Type TA49438.

Ordering Information

PART NUMBER

ISL9G2060ES3

ISL9G2060EG3

ISL9G2060EP3

PACKAGE

BRAND

G2060ES3

TO-263AB

TO-247

G2060EG3

G2060EP3

TO-220AB

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, e.g.,

ISL9G1260ES3S9A.

/Keyw

ords

(Intersi

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

Corpor

ation,

Semico

nducto

r 600V,

SMPS

II LGC

Series

N-

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

JEDEC TO-263AB

Chann

IGBT)

/Creato

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

ISL9G2060EG3, ISL9G2060EP3, ISL9G2060ES3 Rev. A

12 3 4 5 6 7...11

中文翻译

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与ISL9G2060ES3相关器件

型号	品牌	获取价格	描述	数据表
ISL9G2060ES39A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 35A I(C) \| TO-263AB
ISL9H1260EG3	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 20A I(C) \| TO-247
ISL9H1260EP3	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 20A I(C) \| TO-220AB
ISL9H1260ES3	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 20A I(C) \| TO-263AB
ISL9H1260ES3T	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 20A I(C) \| TO-263AB
ISL9H2060EG3	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 35A I(C) \| TO-247
ISL9K1560G3	FAIRCHILD	获取价格	15A, 600V Stealth⑩ Dual Diode
ISL9K1560G3	ONSEMI	获取价格	30 A、600 V STEALTH™ 双二极管
ISL9K18120G3	FAIRCHILD	获取价格	18A, 1200V Stealth⑩ Dual Diode
ISL9K30120G3	FAIRCHILD	获取价格	30A, 1200V Stealth⑩ Dual Diode

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