Datasheet > IS65C256AL_12

IS65C256AL_12

更新时间： 2024-11-30 12:23:03

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
12页	625K
描述
32K x 8 LOW POWER CMOS STATIC RAM

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IS65C256AL_12 数据手册

IS65C256AL

IS62C256AL

32K x 8 LOW POWER CMOS STATIC RAM

MAY 2012

FEATURES

DESCRIPTION

The ISSI IS62C256AL/IS65C256AL is a low power,

32,768 word by 8-bit CMOS static RAM. It is fabricated

using ISSI's high-performance, low power CMOS tech-

nology.

• Access time: 25 ns, 45 ns

• Low active power: 200 mW (typical)

• Low standby power

— 150 µW (typical) CMOS standby

— 15 mW (typical) operating

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 150 µW (typical) at CMOS input levels.

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using an active

LOW Chip Select (CE) input and an active LOW Output

Enable (OE) input. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

• TTL compatible inputs and outputs

• Single 5V power supply

• Lead-free available

• Industrial and Automotive temperatures avail-

able

The IS62C256AL/IS65C256AL is pin compatible with

other 32Kx8 SRAMs in plastic SOP or TSOP (Type I)

package.

FUNCTIONAL BLOCK DIAGRAM

32K X 8

MEMORY ARRAY

A0-A14

DECODER

VDD

GND

I/O

DATA

CIRCUIT

COLUMN I/O

I/O0-I/O7

CONTROL

CIRCUIT

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. D

05/09/12

12 3 4 5 6 7...12

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