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IS64WV102416BLL-10MLA3 PDF预览

IS64WV102416BLL-10MLA3

更新时间: 2024-11-05 12:46:27
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
20页 323K
描述
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS64WV102416BLL-10MLA3 数据手册

 浏览型号IS64WV102416BLL-10MLA3的Datasheet PDF文件第2页浏览型号IS64WV102416BLL-10MLA3的Datasheet PDF文件第3页浏览型号IS64WV102416BLL-10MLA3的Datasheet PDF文件第4页浏览型号IS64WV102416BLL-10MLA3的Datasheet PDF文件第5页浏览型号IS64WV102416BLL-10MLA3的Datasheet PDF文件第6页浏览型号IS64WV102416BLL-10MLA3的Datasheet PDF文件第7页 
IS61WV102416ALLꢀ  
IS61WV102416BLL  
IS64WV102416BLL  
1Mꢀxꢀ16ꢀꢀHIGH-SPEEDꢀASYNCHRONOUS  
CMOSꢀSTATICꢀRAMꢀWITHꢀ3.3VꢀSUPPLY  
MAYꢀ2012  
FEATURES  
•ꢀ High-speedꢀaccessꢀtimes:ꢀꢀ  
ꢀꢀ8,ꢀ10,ꢀ20ꢀns  
•ꢀ High-performance,ꢀlow-powerꢀCMOSꢀprocess  
•ꢀ Multipleꢀcenterꢀpowerꢀandꢀgroundꢀpinsꢀforꢀgreaterꢀ  
noiseꢀimmunity  
DESCRIPTION  
TheISSIIS61WV102416ALL/BLLandIS64WV102416BLLꢀ  
areꢀhigh-speed,ꢀ16M-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ1024Kꢀ  
wordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-perfor-  
manceꢀ CMOSꢀ technology.ꢀ Thisꢀ highlyꢀ reliableꢀ processꢀ  
coupledꢀwithꢀinnovativeꢀcircuitꢀdesignꢀtechniques,ꢀyieldsꢀ  
high-performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.  
•ꢀ EasyꢀmemoryꢀexpansionꢀwithꢀCEꢀandꢀOEꢀop-  
tions  
•ꢀ CEꢀpower-down  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ  
required  
WhenCEisHIGH(deselected),thedeviceassumesaꢀ  
standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-  
ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ  
WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ  
memory.AꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ  
Byteꢀ(LB)ꢀaccess.  
•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs  
•ꢀ Singleꢀpowerꢀsupply  
ꢀ Vddꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV102416ALL)  
ꢀ speedꢀ=ꢀ20nsꢀforꢀVddꢀ1.65Vꢀtoꢀ2.2V  
ꢀ Vddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV102416BLL)  
ꢀ speedꢀ=ꢀ10nsꢀforꢀVddꢀ2.4Vꢀtoꢀ3.6V  
ꢀ speedꢀ=ꢀ8nsꢀforꢀVddꢀ3.3Vꢀ+ꢀ5%  
•ꢀ Packagesꢀavailable:ꢀ  
ThedeviceispackagedintheJEDECstandard48-pinꢀ  
TSOPꢀTypeꢀIꢀandꢀ48-pinꢀMiniꢀBGAꢀ(9mmꢀxꢀ11mm).  
–ꢀꢀ48-ballꢀminiBGAꢀꢀ(9mmꢀxꢀ11mm)  
ꢀ –ꢀꢀꢀ48-pinꢀTSOPꢀ(TypeꢀI)ꢀ  
•ꢀ IndustrialꢀandꢀAutomotiveꢀTemperatureꢀSupport  
•ꢀ Lead-freeꢀavailable  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
FUNCTIONALꢀBLOCKꢀDIAGRAM  
1024K x 16  
MEMORY ARRAY  
A0-A19  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyrightꢀ©ꢀ2006ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ  
1
Rev.ꢀ F  
05/09/12  

IS64WV102416BLL-10MLA3 替代型号

型号 品牌 替代类型 描述 数据表
IS64WV102416BLL-10MA3 ISSI

完全替代

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS62WV102416BLL-25MLI ISSI

类似代替

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS62WV102416ALL-35MLI ISSI

类似代替

1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

与IS64WV102416BLL-10MLA3相关器件

型号 品牌 获取价格 描述 数据表
IS64WV102416BLL-10MLA3-TR ISSI

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SRAM
IS64WV102416BLL-10TA3 ISSI

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1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV10248BLL ISSI

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1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10CTLA3 ISSI

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1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10MA3 ISSI

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1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248BLL-10TA3 ISSI

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1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248EDBLL-10CTLA3 ISSI

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Standard SRAM, 1MX8, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS64WV1024BLL ISSI

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128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1024BLL-12BA3 ISSI

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Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 8 X 6 MM, MO-207, TFBGA-48
IS64WV1024BLL-12BLA3 ISSI

获取价格

Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 8 X 6 MM, LEAD FREE, MO-207, TFBGA-48