IS63WV1024BLL
IS64WV1024BLL
128K x 8 HIGH-SPEED CMOS STATIC RAM
JANUARY 2010
FEATURES
DESCRIPTION
• High-speed access time:
12 ns: 3.3V + 10%
The ISSI IS63/64WV1024BLL is a very high-speed, low
power, 131,072-word by 8-bit CMOS static RAM. The
IS63/64WV1024BLL is fabricated using ISSI's
high-performanceCMOStechnology. Thishighlyreliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
15 ns: 2.5V – 3.6V
• High-performance, low-power CMOS process
• CMOS Low Power Operation
50 mW (typical) operating current
25 µW (typical) standby current
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 25 µW (typical) with CMOS input levels.
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
The IS63/64WV1024BLL operates from a single VDD
power supply. The IS63/64WV1024BLL is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball
miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil)
packages.
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Packages available:
– 32-pin TSOP (Type II)
– 32-pin sTSOP (Type I)
– 48-Ball miniBGA (6mm x 8mm)
– 32-pin 300-mil SOJ
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
128K X 8
MEMORY ARRAY
A0-A16
DECODER
VDD
GND
I/O
DATA
CIRCUIT
COLUMN I/O
I/O0-I/O7
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. C
12/03/09