是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | TFBGA, BGA48,6X8,30 | Reach Compliance Code: | compliant |
风险等级: | 5.85 | 最长访问时间: | 10 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B48 |
长度: | 8 mm | 内存密度: | 1048576 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 组织: | 128KX8 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA48,6X8,30 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 电源: | 2.5/3.3 V |
认证状态: | Not Qualified | 筛选级别: | AEC-Q100 |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.01 A |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.035 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.4 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | AUTOMOTIVE | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
宽度: | 6 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS64WV1288EEBLL-10BLA1 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV1288EEBLL-10BLA3 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV1288EEBLL-10CTA1 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV1288EEBLL-10CTA3 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV1288EEBLL-10CTLA1 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV1288EEBLL-10CTLA3 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV1288EEBLL-10KLA1 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV1288EEBLL-10KLA3 | ISSI |
获取价格 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC | |
IS64WV204816ALL-12CTLA3 | ISSI |
获取价格 |
Standard SRAM, 2MX16, 12ns, CMOS, PDSO48, TSOP1-48 | |
IS64WV204816BLL-12BLA3 | ISSI |
获取价格 |
Standard SRAM, 2MX16, 12ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48 |