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IS64WV1288EEBLL-10BA3 PDF预览

IS64WV1288EEBLL-10BA3

更新时间： 2024-11-24 11:58:59
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
16页 830K
描述
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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中文翻译

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IS64WV1288EEBLL-10BA3 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：TFBGA, BGA48,6X8,30Reach Compliance Code：compliant
风险等级：5.85最长访问时间：10 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
长度：8 mm内存密度：1048576 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：48
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-40 °C组织：128KX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL电源：2.5/3.3 V
认证状态：Not Qualified筛选级别：AEC-Q100
座面最大高度：1.2 mm最大待机电流：0.01 A
最小待机电流：2 V子类别：SRAMs
最大压摆率：0.035 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.4 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
宽度：6 mmBase Number Matches：1

IS64WV1288EEBLL-10BA3 数据手册

 浏览型号IS64WV1288EEBLL-10BA3的Datasheet PDF文件第2页浏览型号IS64WV1288EEBLL-10BA3的Datasheet PDF文件第3页浏览型号IS64WV1288EEBLL-10BA3的Datasheet PDF文件第4页浏览型号IS64WV1288EEBLL-10BA3的Datasheet PDF文件第5页浏览型号IS64WV1288EEBLL-10BA3的Datasheet PDF文件第6页浏览型号IS64WV1288EEBLL-10BA3的Datasheet PDF文件第7页 
IS61WV1288EEBLL  
IS64WV1288EEBLL  
256K x 8 HIGH SPEED ASYNCHRONOUS  
CMOS STATIC RAM WITH ECC  
ADVANCED INFORMATION  
OCTOBER 2012  
DESCRIPTION  
FEATURES  
Theꢀ ISSIꢀ IS61/64WV1288EEBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ  
1,048,576-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ131,072ꢀwordsꢀbyꢀ  
8ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'shigh-performanceCMOS  
technology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinno-  
vative circuit design techniques, yields high-performance  
and low power consumption devices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)  
•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)  
CMOS standby  
•ꢀ Singleꢀpowerꢀsupply  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ  
Whenꢀ CEꢀ isꢀ HIGHꢀ (deselected),ꢀ theꢀ deviceꢀ assumesꢀ  
a standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
required  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailable  
EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCE and OE.ꢀTheꢀactiveꢀLOWꢀ  
WriteꢀEnableꢀ(WE) controls both writing and reading of  
the memory.  
•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection  
TheꢀIS61/64WV1288EEBLLꢀisꢀpackagedꢀinꢀtheꢀJEDECꢀ  
standardꢀ32-pinꢀSOJ,ꢀTSOP-II,ꢀsTSOP-I,ꢀandꢀ48-ballꢀBGAꢀ  
(6mmx8mm).  
FUNCTIONAL BLOCK DIAGRAM  
ECC Array  
(256Kx4)  
Memory Array  
(256Kx8)  
A0-A16  
Decoder  
8
4
8
8
12  
I/O Data  
Circuit  
ECC  
IO0-7  
Column I/O  
/CE  
/OE  
/WE  
Control  
Circuit  
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. 00A  
10/10/2012  
1234567...16

中文翻译

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与IS64WV1288EEBLL-10BA3相关器件

型号 品牌 获取价格 描述 数据表
IS64WV1288EEBLL-10BLA1 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10BLA3 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10CTA1 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10CTA3 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10CTLA1 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10CTLA3 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10KLA1 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10KLA3 ISSI

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 		256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV204816ALL-12CTLA3 ISSI

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 		Standard SRAM, 2MX16, 12ns, CMOS, PDSO48, TSOP1-48
IS64WV204816BLL-12BLA3 ISSI

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 		Standard SRAM, 2MX16, 12ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

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