Datasheet > IS64WV20488BLL-10CTLA3-TR

IS64WV20488BLL-10CTLA3-TR

更新时间： 2024-11-20 21:03:27

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
19页	312K
描述
IC SRAM 16MBIT 10NS 44TSOP

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IS64WV20488BLL-10CTLA3-TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	TSOP2,
Reach Compliance Code：	compliant	风险等级：	5.8
最长访问时间：	10 ns	JESD-30 代码：	R-PDSO-G44
长度：	18.41 mm	内存密度：	16777216 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	8
功能数量：	1	端子数量：	44
字数：	2097152 words	字数代码：	2000000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-40 °C	组织：	2MX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP2
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.4 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	AUTOMOTIVE	端子形式：	GULL WING
端子节距：	0.8 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	10.16 mm
Base Number Matches：	1

IS64WV20488BLL-10CTLA3-TR 数据手册

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IS61WV20488ALL

IS61/64WV20488BLL

2M x 8 HIGH-SPEED CMOS STATIC RAM

June 2014

FEATURES

DESCRIPTION

•ꢀ High-speed access times:

TheꢀISSIꢀIS61WV20488ALL/BLLꢀandꢀ

8, 10, 20 ns

IS64WV20488BLLꢀareꢀveryꢀhigh-speed,ꢀlowꢀ

power,ꢀ2M-wordꢀbyꢀ8-bitꢀCMOSꢀstaticꢀRAM.ꢀTheꢀ

IS61WV20488ALL/BLLꢀandꢀIS64WV20488BLLꢀareꢀfab-

ricated using ISSI'sꢀhigh-performanceꢀCMOSꢀtechnol-

ogy.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinnovativeꢀ

circuit design techniques, yields higher performance

and low power consumption devices.

•ꢀ High-performance,ꢀlow-powerꢀCMOSꢀprocess

•ꢀ Multipleꢀcenterꢀpowerꢀandꢀgroundꢀpinsꢀforꢀ

greater noise immunity

•ꢀ EasyꢀmemoryꢀexpansionꢀwithꢀCE and OE op-

tions

•ꢀ CE power-down

When CE is HIGH (deselected), the device assumes

a standby mode at which the power dissipation can be

reducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ

required

•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs

•ꢀ Singleꢀpowerꢀsupply

TheꢀIS61WV20488ALL/BLLꢀandꢀIS64WV20488BLLꢀ

operate from a single power supply and all inputs are

TTL-compatible.ꢀ

– Vddꢀ1.65Vꢀtoꢀ2.2Vꢀ(IS61WV20488ALL)

speed = 20ns for Vcc = 1.65V to 2.2V

– Vddꢀ2.4Vꢀtoꢀ3.6Vꢀ(IS61/64WV20488BLL)

speed = 10ns for Vcc = 2.4V to 3.6V

speed = 8ns for Vcc = 3.3V + 5%

•ꢀ Packagesꢀavailable:

TheꢀIS61WV20488ALL/BLLꢀandꢀIS64WV20488BLLꢀareꢀ

availableꢀinꢀ48ꢀballꢀminiꢀBGAꢀandꢀꢀ44-pinꢀTSOPꢀ(TypeꢀII)ꢀ

packages.

–

48-ball miniBGA (9mm x 11mm)

ꢀ –ꢀꢀꢀ44-pinꢀTSOPꢀ(TypeꢀII)ꢀ

•ꢀ IndustrialꢀandꢀAutomotiveꢀTemperatureꢀSupport

•ꢀ Lead-freeꢀavailable

FUNCTIONAL BLOCK DIAGRAM

2M X 8

MEMORY ARRAY

A0-A20

DECODER

VDD

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

06/23/2014

12 3 4 5 6 7...19

中文翻译

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与IS64WV20488BLL-10CTLA3-TR相关器件

型号	品牌	获取价格	描述	数据表
IS64WV20488BLL-10MA3	ISSI	获取价格	2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10TA3	ISSI	获取价格	2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10TA3-TR	ISSI	获取价格	Standard SRAM, 2MX8, 10ns, CMOS, PDSO44,
IS64WV25616BLL/BLS	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10BA3	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10BLA3	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10CTA3	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10CTLA3	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44
IS64WV25616BLL-10CTLA3-TR	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44
IS64WV25616BLL-10TLA3	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

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