Datasheet > IS64WV25616BLL/BLS

IS64WV25616BLL/BLS

更新时间： 2024-11-24 11:58:59

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
21页	212K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

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IS61WV25616ALL/ALS

IS61WV25616BLL/BLS

IS64WV25616BLL/BLS

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

JULY2010

DESCRIPTION

FEATURES

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx

are high-speed, 4,194,304-bit static RAMs organized as

262,144 words by 16 bits. It is fabricated usingISSI's high-

performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de-

vices.

HIGHSPEED:(IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical)

CMOS standby

LOWPOWER:(IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Low Standby Power: 0.6 mW (typical)

CMOS standby

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Singlepowersupply

— VDD 1.65V to 2.2V (IS61WV25616Axx)

— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

• Three state outputs

The IS61WV25616Axx/Bxx and IS64WV25616Bxx are

packagedintheJEDECstandard44-pinTSOPTypeII and

48-pin Mini BGA (6mm x 8mm).

• Data control for upper and lower bytes

• IndustrialandAutomotivetemperaturesupport

• Lead-freeavailable

FUNCTIONAL BLOCK DIAGRAM

256K x 16

MEMORY ARRAY

A0-A17

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. G

07/15/2010

12 3 4 5 6 7...21

中文翻译

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与IS64WV25616BLL/BLS相关器件

型号	品牌	获取价格	描述	数据表
IS64WV25616BLL-10BA3	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10BLA3	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10CTA3	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10CTLA3	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44
IS64WV25616BLL-10CTLA3-TR	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44
IS64WV25616BLL-10TLA3	ISSI	获取价格	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
IS64WV25616EDBLL	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV25616EDBLL-10BA1	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV25616EDBLL-10BA1-TR	ISSI	获取价格	Application Specific SRAM, 256KX16, 10ns, CMOS, PBGA48
IS64WV25616EDBLL-10BA3	ISSI	获取价格	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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