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IS64WV25616EDBLL PDF预览

IS64WV25616EDBLL

更新时间: 2024-11-09 11:58:59
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
14页 751K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

IS64WV25616EDBLL 数据手册

 浏览型号IS64WV25616EDBLL的Datasheet PDF文件第2页浏览型号IS64WV25616EDBLL的Datasheet PDF文件第3页浏览型号IS64WV25616EDBLL的Datasheet PDF文件第4页浏览型号IS64WV25616EDBLL的Datasheet PDF文件第5页浏览型号IS64WV25616EDBLL的Datasheet PDF文件第6页浏览型号IS64WV25616EDBLL的Datasheet PDF文件第7页 
IS61WV25616EDBLL  
IS64WV25616EDBLL  
256K x 16 HIGH SPEED ASYNCHRONOUS  
CMOS STATIC RAM WITH ECC  
OCTOBER 2011  
DESCRIPTION  
FEATURES  
Theꢀ ISSIꢀ IS61/64WV25616EDBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ  
4,194,304-bitstaticRAMsorganizedas262,144wordsꢀ  
byꢀ16ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀ  
CMOStechnology.Thishighlyreliableprocesscoupledꢀ  
withꢀ innovativeꢀ circuitꢀ designꢀ techniques,ꢀ yieldsꢀ high-  
performanceꢀandꢀlowꢀpowerꢀconsumptionꢀdevices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)  
•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)ꢀ  
CMOSꢀstandby  
•ꢀ Singleꢀpowerꢀsupply  
ꢀ —ꢀꢀVddꢀ2.4Vꢀtoꢀ3.6Vꢀ(10ꢀns)  
—ꢀꢀVdd 3.3Vꢀ ꢀ10%ꢀ(8ꢀns)  
WhenCEisHIGH(deselected),thedeviceassumesaꢀ  
standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-  
ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ  
required  
EasymemoryexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ  
WriteEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ  
memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ  
Byteꢀ(LB)ꢀaccess.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailable  
•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection  
TheꢀIS61/64WV25616EDBLLꢀisꢀꢀpackagedꢀinꢀtheꢀJEDECꢀ  
standard44-pinꢀTSOP-IIꢀꢀandꢀ48-pinꢀMiniꢀBGAꢀ(6mmꢀxꢀ  
8mm).  
FUNCTIONAL BLOCK DIAGRAM  
Memory  
Lower IO  
Array-  
Memory  
Upper IO  
Array-  
A0-A17  
ECC  
Array-  
256K  
x4  
ECC  
Array-  
256K  
x4  
Decoder  
256Kx8  
256Kx8  
8
4
8
4
8
8
8
8
12  
12  
IO0-7  
ECC  
ECC  
I/O Data  
Circuit  
Column I/O  
IO8-15  
/CE  
/OE  
/WE  
/UB  
/LB  
Control  
Circuit  
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-  
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ  
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀꢀ  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
1
Rev. A  
09/29/2011  

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IC,SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC,