5秒后页面跳转
IS64WV1288EEBLL-10KLA3 PDF预览

IS64WV1288EEBLL-10KLA3

更新时间: 2024-11-06 11:58:59
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
16页 830K
描述
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

IS64WV1288EEBLL-10KLA3 数据手册

 浏览型号IS64WV1288EEBLL-10KLA3的Datasheet PDF文件第2页浏览型号IS64WV1288EEBLL-10KLA3的Datasheet PDF文件第3页浏览型号IS64WV1288EEBLL-10KLA3的Datasheet PDF文件第4页浏览型号IS64WV1288EEBLL-10KLA3的Datasheet PDF文件第5页浏览型号IS64WV1288EEBLL-10KLA3的Datasheet PDF文件第6页浏览型号IS64WV1288EEBLL-10KLA3的Datasheet PDF文件第7页 
IS61WV1288EEBLL  
IS64WV1288EEBLL  
256K x 8 HIGH SPEED ASYNCHRONOUS  
CMOS STATIC RAM WITH ECC  
ADVANCED INFORMATION  
OCTOBER 2012  
DESCRIPTION  
FEATURES  
Theꢀ ISSIꢀ IS61/64WV1288EEBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ  
1,048,576-bitstaticRAMsorganizedas131,072wordsꢀbyꢀ  
8bits.ItisfabricatedusingISSI'shigh-performanceCMOS  
technology.ꢀThishighlyreliableprocesscoupledwithinno-  
vative circuit design techniques, yields high-performance  
and low power consumption devices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)  
•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)  
CMOS standby  
•ꢀ Singleꢀpowerꢀsupply  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ  
Whenꢀ CEꢀ isꢀ HIGHꢀ (deselected),ꢀ theꢀ deviceꢀ assumesꢀ  
a standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
required  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailable  
EasymemoryexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCE and OE.ꢀTheꢀactiveꢀLOWꢀ  
WriteEnable(WE) controls both writing and reading of  
the memory.  
•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection  
TheIS61/64WV1288EEBLLispackagedintheJEDECꢀ  
standard32-pinSOJ,TSOP-II,sTSOP-I,and48-ballBGAꢀ  
(6mmx8mm).  
FUNCTIONAL BLOCK DIAGRAM  
ECC Array  
(256Kx4)  
Memory Array  
(256Kx8)  
A0-A16  
Decoder  
8
4
8
8
12  
I/O Data  
Circuit  
ECC  
IO0-7  
Column I/O  
/CE  
/OE  
/WE  
Control  
Circuit  
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. 00A  
10/10/2012  

与IS64WV1288EEBLL-10KLA3相关器件

型号 品牌 获取价格 描述 数据表
IS64WV204816ALL-12CTLA3 ISSI

获取价格

Standard SRAM, 2MX16, 12ns, CMOS, PDSO48, TSOP1-48
IS64WV204816BLL-12BLA3 ISSI

获取价格

Standard SRAM, 2MX16, 12ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS64WV204816BLL-12CTLA3 ISSI

获取价格

Standard SRAM, 2MX16, 12ns, CMOS, PDSO48, 12 X 20 MM, LEAD FREE, TSOP1-48
IS64WV20488BLL ISSI

获取价格

2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10CTLA3-TR ISSI

获取价格

IC SRAM 16MBIT 10NS 44TSOP
IS64WV20488BLL-10MA3 ISSI

获取价格

2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10TA3 ISSI

获取价格

2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10TA3-TR ISSI

获取价格

Standard SRAM, 2MX8, 10ns, CMOS, PDSO44,
IS64WV25616BLL/BLS ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLL-10BA3 ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM