Datasheet > IS64WV1288EEBLL-10CTLA3

IS64WV1288EEBLL-10CTLA3

更新时间： 2024-11-06 11:58:59

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
16页	830K
描述
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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IS64WV1288EEBLL-10CTLA3 数据手册

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IS61WV1288EEBLL

IS64WV1288EEBLL

256K x 8 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH ECC

ADVANCED INFORMATION

OCTOBER 2012

DESCRIPTION

FEATURES

Theꢀ ISSIꢀ IS61/64WV1288EEBLLꢀ isꢀ aꢀ ꢀ high-speed,ꢀ

1,048,576-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ131,072ꢀwordsꢀbyꢀ

8ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI'shigh-performanceCMOS

technology.ꢀThisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinno-

vative circuit design techniques, yields high-performance

and low power consumption devices.

•ꢀ High-speedꢀaccessꢀtime:ꢀ8,ꢀ10ꢀns

•ꢀ LowꢀActiveꢀPower:ꢀ85ꢀmWꢀ(typical)

•ꢀ LowꢀStandbyꢀPower:ꢀ7ꢀmWꢀ(typical)

CMOS standby

•ꢀ Singleꢀpowerꢀsupply

•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀ

Whenꢀ CEꢀ isꢀ HIGHꢀ (deselected),ꢀ theꢀ deviceꢀ assumesꢀ

a standby mode at which the power dissipation can be

reduced down with CMOS input levels.

required

•ꢀ Threeꢀstateꢀoutputs

•ꢀ IndustrialꢀandꢀAutomotiveꢀtemperatureꢀsupport

•ꢀ Lead-freeꢀavailable

EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ

andꢀOutputꢀEnableꢀinputs,ꢀCE and OE.ꢀTheꢀactiveꢀLOWꢀ

WriteꢀEnableꢀ(WE) controls both writing and reading of

the memory.

•ꢀ ErrorꢀDetectionꢀandꢀErrorꢀCorrection

TheꢀIS61/64WV1288EEBLLꢀisꢀpackagedꢀinꢀtheꢀJEDECꢀ

standardꢀ32-pinꢀSOJ,ꢀTSOP-II,ꢀsTSOP-I,ꢀandꢀ48-ballꢀBGAꢀ

(6mmx8mm).

FUNCTIONAL BLOCK DIAGRAM

ECC Array

(256Kx4)

Memory Array

(256Kx8)

A0-A16

Decoder

I/O Data

Circuit

ECC

IO0-7

Column I/O

/CE

/OE

/WE

Control

Circuit

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. 00A

10/10/2012

12 3 4 5 6 7...16

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与IS64WV1288EEBLL-10CTLA3相关器件

型号	品牌	获取价格	描述	数据表
IS64WV1288EEBLL-10KLA1	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10KLA3	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV204816ALL-12CTLA3	ISSI	获取价格	Standard SRAM, 2MX16, 12ns, CMOS, PDSO48, TSOP1-48
IS64WV204816BLL-12BLA3	ISSI	获取价格	Standard SRAM, 2MX16, 12ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS64WV204816BLL-12CTLA3	ISSI	获取价格	Standard SRAM, 2MX16, 12ns, CMOS, PDSO48, 12 X 20 MM, LEAD FREE, TSOP1-48
IS64WV20488BLL	ISSI	获取价格	2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10CTLA3-TR	ISSI	获取价格	IC SRAM 16MBIT 10NS 44TSOP
IS64WV20488BLL-10MA3	ISSI	获取价格	2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10TA3	ISSI	获取价格	2M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV20488BLL-10TA3-TR	ISSI	获取价格	Standard SRAM, 2MX8, 10ns, CMOS, PDSO44,

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