Datasheet > IS64WV12816DBLS

IS64WV12816DBLS

更新时间： 2024-11-20 05:39:35

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
21页	238K
描述
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

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中文翻译

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数据手册

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IS64WV12816DBLS 数据手册

IS61WV12816DALL/DALS

IS61WV12816DBLL/DBLS

IS64WV12816DBLL/DBLS

128K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM

MAY2008

DESCRIPTION

FEATURES

TheISSIIS61WV12816DAxx/DBxxandIS64WV12816DBxx

are high-speed, 2,097,152-bit static RAMs organized as

131,072 words by 16 bits. It is fabricated usingISSI's high-

performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de-

vices.

HIGH SPEED: (IS61/64WV12816DALL/DBLL)

• High-speed access time: 8, 10, 12, 20 ns

• Low Active Power: 135 mW (typical)

• Low Standby Power: 12 μW (typical)

CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)

• High-speed access time: 25, 35 ns

• Low Active Power: 55 mW (typical)

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

• Low Standby Power: 12 μW (typical)

CMOS standby

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• Single power supply

— V^DD1.65V to 2.2V (IS61WV12816DAxx)

— V^DD2.4V to 3.6V (IS61/64WV12816DBxx)

• Fully static operation: no clock or refresh

required

TheIS61WV12816DAxx/DBxxandIS64WV12816DBxxare

packagedintheJEDECstandard44-pinTSOPTypeII and

48-pin Mini BGA (6mm x 8mm).

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

128K x 16

MEMORY ARRAY

A0-A16

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. C

05/01/08

12 3 4 5 6 7...21

中文翻译

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与IS64WV12816DBLS相关器件

型号	品牌	获取价格	描述	数据表
IS64WV12816EDBLL	ISSI	获取价格	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288DBLL/DBLS	ISSI	获取价格	128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1288DBLL-10TA3	ISSI	获取价格	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32,
IS64WV1288DBLL-10TA3-TR	ISSI	获取价格	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32,
IS64WV1288EEBLL	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10BA1	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10BA3	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10BLA1	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10BLA3	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS64WV1288EEBLL-10CTA1	ISSI	获取价格	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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