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IS64WV12816BLL-15TLA3 PDF预览

IS64WV12816BLL-15TLA3

更新时间: 2024-11-05 03:02:35
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
15页 120K
描述
128K x 16 HIGH-SPEED CMOS STATIC RAM

IS64WV12816BLL-15TLA3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.53
最长访问时间:15 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:18.415 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2.5/3.3 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:1.2 mm最大待机电流:0.006 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.04 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:10.16 mmBase Number Matches:1

IS64WV12816BLL-15TLA3 数据手册

 浏览型号IS64WV12816BLL-15TLA3的Datasheet PDF文件第2页浏览型号IS64WV12816BLL-15TLA3的Datasheet PDF文件第3页浏览型号IS64WV12816BLL-15TLA3的Datasheet PDF文件第4页浏览型号IS64WV12816BLL-15TLA3的Datasheet PDF文件第5页浏览型号IS64WV12816BLL-15TLA3的Datasheet PDF文件第6页浏览型号IS64WV12816BLL-15TLA3的Datasheet PDF文件第7页 
®
IS61WV12816BLL  
IS64WV12816BLL  
ISSI  
128K x 16 HIGH-SPEED CMOS STATIC RAM  
FEBRUARY2006  
FEATURES  
DESCRIPTION  
The ISSI IS61WV12816BLL and IS64WV12816BLL are  
high-speed,2,097,152-bitstaticRAMorganizedas131,072  
words by 16 bits. They are fabricated using ISSI's high-  
performanceCMOStechnology.Thishighlyreliableprocess  
coupled with innovative circuit design techniques, yields  
accesstimesasfastas12nswithlowpowerconsumption.  
• High-speed access time:  
12 ns: 3.3V + 10%  
15 ns: 2.5V-3.6V  
• Operating Current: 25mA (typ.)  
• Stand by Current: 400µA(typ.)  
• TTL and CMOS compatible interface levels  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
EasymemoryexpansionisprovidedbyusingChipEnable  
and Output Enable inputs, CE and OE. The active LOW  
Write Enable (WE) controls both writing and reading of the  
memory. A data byte allows Upper Byte (UB) and Lower  
Byte (LB) access.  
• Three state outputs  
• Data control for upper and lower bytes  
• Industrial and Automotive temperatures avail-  
able  
TheIS61WV12816BLLandIS64WV12816BLLarepackaged  
in the JEDEC standard 44-pin TSOP (Type II) and 48-pin  
mini BGA (6mm x 8mm).  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
128Kx16  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
UB  
LB  
CONTROL  
CIRCUIT  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. C  
02/03/06  

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