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IS62WV102416BLL-25MLI PDF预览

IS62WV102416BLL-25MLI

更新时间： 2024-11-24 12:04:03
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器
页数 文件大小 规格书
17页 187K
描述
1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

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中文翻译

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IS62WV102416BLL-25MLI 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：BGA
包装说明：TFBGA, BGA48,6X8,30针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.56
最长访问时间：25 nsI/O 类型：COMMON
JESD-30 代码：R-PBGA-B48JESD-609代码：e1
长度：11 mm内存密度：16777216 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA48,6X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大待机电流：0.0012 A最小待机电流：2.4 V
子类别：SRAMs最大压摆率：0.035 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.4 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40宽度：9 mm
Base Number Matches：1

IS62WV102416BLL-25MLI 数据手册

 浏览型号IS62WV102416BLL-25MLI的Datasheet PDF文件第2页浏览型号IS62WV102416BLL-25MLI的Datasheet PDF文件第3页浏览型号IS62WV102416BLL-25MLI的Datasheet PDF文件第4页浏览型号IS62WV102416BLL-25MLI的Datasheet PDF文件第5页浏览型号IS62WV102416BLL-25MLI的Datasheet PDF文件第6页浏览型号IS62WV102416BLL-25MLI的Datasheet PDF文件第7页 
IS62WV102416ALL  
IS62WV102416BLL  
IS65WV102416BLL  
1M x 16 HIGH-SPEED LOW POWER  
ASYNCHRONOUS CMOS STATIC RAM  
JANUARY2008  
FEATURES  
• High-speed access times:  
25, 35 ns  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for greater  
noise immunity  
DESCRIPTION  
TheISSIIS62WV102416ALL/BLLandIS65WV102416BLL  
are high-speed, 16M-bit static RAMs organized as 1024K  
wordsby16bits. ItisfabricatedusingISSI'shigh-perform-  
anceCMOStechnology.Thishighlyreliableprocesscoupled  
with innovative circuit design techniques, yields high-  
performance and low power consumption devices.  
• Easy memory expansion with CS1 and OE  
options  
• CS1 power-down  
• Fully static operation: no clock or refresh  
required  
When CS1 is HIGH (deselected) or when CS2 is LOW  
(deselected) or when CS1 is LOW, CS2 is HIGH and both  
LBandUBareHIGH, thedeviceassumesastandbymode  
at which the power dissipation can be reduced down with  
CMOS input levels.  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs. The active LOW Write Enable  
(WE) controls both writing and reading of the memory. A  
data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
• TTL compatible inputs and outputs  
• Single power supply  
VDD 1.65V to 2.2V (IS62WV102416ALL)  
speed = 35ns for VDD 1.65V to 2.2V  
VDD 2.4V to 3.6V (IS62/65WV102416BLL)  
speed = 25ns for VDD 2.4V to 3.6V  
• Packages available:  
The device is packaged in the JEDEC standard 48-pin  
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).  
–
48-ball miniBGA (9mm x 11mm)  
– 48-pin TSOP (Type I)  
• Industrial and Automotive Temperature Support  
• Lead-free available  
• Data control for upper and lower bytes  
FUNCTIONAL BLOCK DIAGRAM  
1024K x 16  
MEMORY ARRAY  
A0-A19  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CS1  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. A  
01/18/08  
1234567...17

中文翻译

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IS62WV102416BLL-25MLI 替代型号

型号 品牌 替代类型 描述 数据表
IS64WV102416BLL-10MLA3 ISSI

类似代替

 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS62WV102416ALL-35MLI ISSI

类似代替

 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416BLL-10MA3 ISSI

类似代替

 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

与IS62WV102416BLL-25MLI相关器件

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IS62WV102416BLL-25TI ISSI

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 		1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS62WV102416BLL-25TLI ISSI

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 		1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM
IS62WV102416DALL ISSI

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 		Industrial and Automotive temperature support
IS62WV102416DBLL ISSI

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 		Industrial and Automotive temperature support
IS62WV102416DBLL-45TLI ISSI

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 		Standard SRAM, 1MX16, 45ns, CMOS, PDSO48, 12 X 20 MM, LEAD FREE, TSOP1-48
IS62WV102416EALL ISSI

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 		TTL compatible interface levels
IS62WV102416EALL-55BLI ISSI

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 		IC SRAM 16M PARALLEL 48MGA
IS62WV102416EALL-55BLI-TR ISSI

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 		IC SRAM 16M PARALLEL 48MGA
IS62WV102416EBLL ISSI

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 		TTL compatible interface levels
IS62WV102416EBLL-45BI ISSI

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 		Standard SRAM, 1MX16, 45ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, VFBGA-48

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